Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...

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JUNE 26 MONDAY MORNING RIVA-TF-MoM-OR.1 DETERMINATION OF THE HYDROGEN CONTENT IN DIAMOND-LIKE CARBON AND POLYMERIC THIN FILMS BY REFLECTION ELEC- TRON ENERGY LOSS SPECTROSCOPY. J. Rico, F. <strong>Yubero</strong>, J.P. Espinós, J. Cotrino, and A.R. González-Elipe. ICMSE (CSIC-USE) Amério Vespucio s/n, E-41092 Sevilla, Spain D. Garg. Air Products and Chemicals, Inc. 7201 Hamilton Boulevard, Allentown, PA 18195-1501, USA A new non-destructive method to determine hydrogen content in diamond-like carbon and polymeric thin film materials is developed. The method relies on quantification of the intensity of elastic peak stemming from the backscattering of electrons with the hydrogen atoms present in the samples as measured by reflection electron energy loss spectroscopy. Quantitative analysis of the hydrogen content at the surface of diamond like carbon thin films is achieved by using phenomenological sensitivity factors of hydrogen against the other atoms with reference to polymeric samples. The validity of the method is checked with elastic recoil detection measurements. A comparison is also made with data provided by infrared spectroscopy analysis of the same samples. We estimate that the error bar in the determination of hydrogen content in the samples is around 20% of the total hydrogen content. 20
JUNE 26 MONDAY MORNING RIVA-TF-MoM-INV.1THIN FILM STACKS FOR SPINTRONIC DEVICES: PREPARATION AND CHARACTERIZATION, P.P.Freitas, S.Freitas and R.Ferreira. INESC MN, Lisbon, Portugal and Physics Department, Instituto Superior Tecnico, Lisbon, Portugal Physical Vapour Deposition (PVD) and Ion Beam Deposition (IBD) tools are described as used for the preparation of spintronic device stacks ( hard disk read heads-spin valve and tunnel junction, MRAMS, sensor stacks). These tools allow the uniform deposition of multilayered stacks over 8” wafers, where each individual layer has thickneses down to 1nm. The formation of nm thick AlOx and MgO barriers, critical to the formation of state of the art tunnel barriers is revised. For device patterning, both ion-milling and reactive ion etching techniques are used, the latter becoming necessary for device features below 100nm. The complexity of the magnetic stacks poses several challenges for reactive etching techniques. Finally, spintronic device examples will be given, starting with magnetic tunel junction read heads for magnetic data storage at densities beyond 100Gbit/in2, followed by MRAMS, and different types of field sensors for position, current, and biomedical imaging applications. 19
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