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Itinerant Spin Dynamics in Structures of ... - Jacobs University

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Chapter 1: Introduction 3<br />

the coupl<strong>in</strong>g <strong>of</strong> sp<strong>in</strong> degree <strong>of</strong> freedom and orbital motion <strong>of</strong> the electron. In this model<br />

the electrons are mov<strong>in</strong>g ballistically <strong>in</strong> a quasi one-dimensional channel, due to a second<br />

conf<strong>in</strong>ement. The result for weak SOC <strong>in</strong> first order perturbation theory is a modulation<br />

<strong>of</strong> the sp<strong>in</strong> current with a phase-shift<br />

∆θ = 2αm e<br />

2 L, (1.1)<br />

with α the strength <strong>of</strong> SOC and m e the effective electron mass. This phase-shift ∆θ can be<br />

manipulated by the conf<strong>in</strong><strong>in</strong>g field E z via the gate which <strong>in</strong> turn changes the probability<br />

to f<strong>in</strong>d the sp<strong>in</strong> <strong>in</strong> the ”down” state at the dra<strong>in</strong>. The gate-control makes the sp<strong>in</strong>-FET so<br />

promis<strong>in</strong>g for sp<strong>in</strong>tronic applications. In Sec.2.3.3 we will review this transport <strong>in</strong> ballistic<br />

wires.<br />

Apply<strong>in</strong>g this model <strong>in</strong> an experiment one is, however, confronted with several problems.<br />

<strong>Sp<strong>in</strong></strong>tronic devices which rely on coherent sp<strong>in</strong> precession <strong>of</strong> conduction electrons[DD90,<br />

ZFD04] require a small sp<strong>in</strong> relaxation rate 1/τ s . But as the electron momentum is randomized<br />

due to disorder, the coupl<strong>in</strong>g between sp<strong>in</strong> and orbital degree <strong>of</strong> freedom, the<br />

sp<strong>in</strong>-orbit (SO) <strong>in</strong>teraction, is expected to result not only <strong>in</strong> a sp<strong>in</strong> precession but <strong>in</strong> randomization<br />

<strong>of</strong> the electron sp<strong>in</strong>. This coupl<strong>in</strong>g can lead to counter <strong>in</strong>tuitive effects as the<br />

follow<strong>in</strong>g, described by D’yakonov and Perel’[DP72]: Analyz<strong>in</strong>g the sp<strong>in</strong> transport <strong>in</strong> e.g.<br />

n-type semiconductors at low temperature (T 5K), one f<strong>in</strong>ds that the more the electron<br />

is scattered the longer is the life time <strong>of</strong> the <strong>in</strong>itial sp<strong>in</strong> state. Such experiments are<br />

<strong>of</strong>ten performed <strong>in</strong> devises where the wire width W is several nanometers wide, so that<br />

boundary effects can play an important role: Look<strong>in</strong>g at the extreme situation where W<br />

is <strong>of</strong> the order <strong>of</strong> Fermi wavelength λ F , the D’yakonov-Perel’ sp<strong>in</strong> relaxation is expected<br />

to vanish,[KK00, MFA02] s<strong>in</strong>ce the back scatter<strong>in</strong>g from impurities can <strong>in</strong> one-dimensional<br />

wires only reverse the SO field and thereby the sp<strong>in</strong> precession. Immediately the follow<strong>in</strong>g<br />

question arises: How many channels can be added without enlarg<strong>in</strong>g the sp<strong>in</strong> relaxation rate<br />

significantly? In Ref.[Ket07], which is the start<strong>in</strong>g po<strong>in</strong>t for the analysis presented <strong>in</strong> the<br />

first part <strong>of</strong> the present work, S. Kettemann could show, that 1/τ s is already strongly reduced<br />

<strong>in</strong> much wider wires: as soon as the wirewidth W is smaller than bulksp<strong>in</strong> precession<br />

length L SO , which is the length on which the electron sp<strong>in</strong> precesses a full cycle. S<strong>in</strong>ce L SO<br />

can be several µm and is not changed significantly as the wire width W is reduced, the<br />

reduction <strong>of</strong> sp<strong>in</strong> relaxation can be very useful for applications.<br />

Thestudy<strong>of</strong> thereduction <strong>of</strong> the sp<strong>in</strong>relaxation rate <strong>in</strong> quantum wires for widths exceed<strong>in</strong>g

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