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Itinerant Spin Dynamics in Structures of ... - Jacobs University

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Chapter 2: <strong>Sp<strong>in</strong></strong> <strong>Dynamics</strong>: Overview and Analysis <strong>of</strong> 2D Systems 11<br />

2.3.3 <strong>Sp<strong>in</strong></strong> Orbit Interaction <strong>in</strong> Semiconductors<br />

SOI <strong>in</strong> semiconductors is closely related to break<strong>in</strong>g <strong>of</strong> symmetries which lift sp<strong>in</strong><br />

degeneracy: In the case without magnetic field B we start with a tw<strong>of</strong>old degeneracy: Time<br />

<strong>in</strong>version symmetry, E ↑ (k) = E ↓ (−k) and space <strong>in</strong>version symmetry, E ↑ (k) = E ↑ (−k). As<br />

a consequence we have E ↑ (k) = E ↓ (k). In the follow<strong>in</strong>g we show how the degeneracy is<br />

lifted <strong>in</strong> semiconductor devices <strong>in</strong> case <strong>of</strong> B = 0.<br />

While silicon and germanium have <strong>in</strong> their diamond structure an <strong>in</strong>version symmetry<br />

around every midpo<strong>in</strong>t on each l<strong>in</strong>e connect<strong>in</strong>g nearest neighbor atoms, this is not<br />

the case for III-V-semiconductors like GaAs, InAs, InSb, or ZnS. These have a z<strong>in</strong>c-blende<br />

structure which can be obta<strong>in</strong>ed from a diamond structure with neighbored sites occupied<br />

by the two different elements. Therefore the <strong>in</strong>version symmetry is broken, which results<br />

<strong>in</strong> sp<strong>in</strong>-orbit coupl<strong>in</strong>g. This can be understood by notic<strong>in</strong>g that pairs like Ga-As are local<br />

dipoles whose electric field is responsible for SOC if <strong>in</strong>version symmetry is broken 2 . Similarly,<br />

that symmetry is broken <strong>in</strong> II-VI-semiconductors. This bulk <strong>in</strong>version asymmetry<br />

(BIA) coupl<strong>in</strong>g, or <strong>of</strong>ten so called Dresselhaus-coupl<strong>in</strong>g, is anisotropic, as given by [Dre55]<br />

[<br />

H D = γ D σx k x (ky 2 −k2 z )+σ yk y (kz 2 −k2 x )+σ zk z (kx 2 −k2 y )] , (2.13)<br />

where γ D is the Dresselhaus-sp<strong>in</strong>-orbit coefficient. Band structure calculations yield the<br />

follow<strong>in</strong>g values: γ D = 27.6 eVÅ(GaAs), = 27.2 eVÅ(InAs), = 760.1 eVÅ(InSb) [W<strong>in</strong>03].<br />

Some values extracted <strong>in</strong> experiments are listed <strong>in</strong> Tab.A. Conf<strong>in</strong>ement <strong>in</strong> quantum wells<br />

with width a z on the order <strong>of</strong> the Fermi wave length λ F yields accord<strong>in</strong>gly a sp<strong>in</strong>-orbit<br />

<strong>in</strong>teraction where the momentum <strong>in</strong> growth direction is <strong>of</strong> the order <strong>of</strong> 1/a z . Because<br />

<strong>of</strong> the anisotropy <strong>of</strong> the Dresselhaus term, the sp<strong>in</strong>-orbit <strong>in</strong>teraction depends strongly on<br />

the growth direction <strong>of</strong> the quantum well. Grown <strong>in</strong> [001] direction, one gets, tak<strong>in</strong>g the<br />

expectation value <strong>of</strong> Eq.(2.13) <strong>in</strong> the direction normal to the plane, not<strong>in</strong>g that 〈k z 〉 =<br />

〈kz〉 3 = 0, [Dre55]<br />

H D[001] = α 1 (−σ x k x +σ y k y )+γ D (σ x k x ky 2 −σ y k y kx). 2 (2.14)<br />

where α 1 = γ D 〈kz〉 2 is the l<strong>in</strong>ear Dresselhaus parameter. Thus, <strong>in</strong>sert<strong>in</strong>g an electron with<br />

momentum along the x-direction, with its sp<strong>in</strong> <strong>in</strong>itially polarized <strong>in</strong> z-direction, it will<br />

2 Start<strong>in</strong>g from an extended Kane model where p-like higher energy bands are <strong>in</strong>cluded one gets a Hamiltonian<br />

with matrix elements which are only nonzero if the crystal has no center <strong>of</strong> <strong>in</strong>version.[FMAE + 07]

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