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<strong>MPC</strong>-WORKSHOP JULI 2012<br />
Table 1: Characteristic data of the band gap circuit.<br />
Output voltage 1.2 ± 0.02 V<br />
Load Current ≤ 75 µA<br />
PSRR @ 10KHz -26 dB<br />
Current Consumption @1.9V 4 µA<br />
Figure 9: Low drop out rectifier (LDO).<br />
So, the current of X is N times more than the current<br />
of the N BJT’s connected in parallel which are identical<br />
to X. The value of R2 depends upon the value of R1<br />
chosen.<br />
Now in order to keep the current consumption small,<br />
the value of R1 is set to 60 kΩ and the value of R2 is<br />
600 kΩ in order to get a factor of 10.<br />
For a successful bandgap design there must be a<br />
compromise made between the current and the number<br />
of passive elements. Also the PSRR is important for a<br />
bandgap, because in an RFID application there are big<br />
changes in the available supply voltage. Further the<br />
PSRR must suppress the RF variations, because there<br />
is no space for filtering the input. The bandgap concept<br />
of figure 8 is preferred due to its high PSRR<br />
value in comparison to the other circuits, see [7].<br />
Some characteristic data of the bandgap circuit is<br />
listed in table 1. Current consumption is only 4 µA at<br />
1.9 V supply. The circuit can deliver a load of maximal<br />
75 µA to the demodulation circuit. The output<br />
voltage is stable over temperature range of -40 °C to<br />
125 °C with a minimum VDD supply of 1.9 V to a<br />
maximum VDD of 3.6 V.<br />
C. Low Drop Out Regulator<br />
The low drop out regulator (LDO) provides a stable<br />
voltage supply for the external circuitry connected to<br />
the frontend. Figure 9 shows the standard configuration<br />
used for the LDO with external components separated<br />
by the dotted line. The voltage Vin is taken from<br />
the output of the power rectifier, and the reference<br />
voltage is taken from the bandgap reference. The LDO<br />
used is made with a PMOS pass transistor with a minimum<br />
dropout voltage of 150 mV. The output voltage<br />
is controlled by the resistor divider R1 and R2,<br />
Table 2: Low drop out circuit.<br />
Figure 10: Load modulation circuit.<br />
which are discrete devices to stay flexible for different<br />
applications. The external Schottky-diode is only used<br />
with semi-passive supply, where an external voltage is<br />
available.<br />
The output voltage of the LDO can be adjusted between<br />
1.2 V to 2.2 V by selecting the values of the<br />
resistors R1 and R2.<br />
Usually, the values of R1 and R2 are in mega ohms,<br />
so that the quiescent current of the LDO is kept as<br />
small as possible.<br />
The PSRR of the error amplifier must be better than<br />
32 dB in order to suppress any noise in the supply<br />
voltage [8]. The output voltage Vout is given by the<br />
equation<br />
(4)<br />
2<br />
Vout = Vref<br />
⋅ ( 1+<br />
)<br />
R1<br />
The external capacitor Cout is needed to bridge and<br />
filter the output. The external Schottky diode prevents<br />
any reverse current flow in case Vout is greater than Vin.<br />
This may happen when a battery or a double layer<br />
capacitor (“gold cap”) is used at the output for intermediate<br />
storage. Some characteristics data of the LDO<br />
are listed in table 2.<br />
V. COMMUNICATION<br />
The communication circuits are modulator, field detector<br />
circuit and demodulator.<br />
A. Modulator<br />
Output Voltage Range 1.2 to 2.2 V<br />
Quiescent Current 1 µA<br />
Max Load Current 4 mA<br />
Drop Out Voltage 150 mV<br />
PSRR @ 4mA Load and<br />
10KHz<br />
-32 dB<br />
R<br />
The modulator circuit used is a load modulation (onoff<br />
amplitude shift keying) circuit for sending information<br />
back to the reader as shown in figure 10. The<br />
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