datasheet (3).pdf - EEWeb

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dsPIC33FJ32MC302/304, dsPIC33FJ64MCX02/X04 AND dsPIC33FJ128MCX02/X04 TABLE 31-10: DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS DC CHARACTERISTICS Param No. Standard Operating Conditions: 3.0V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for Industrial -40°C ≤ TA ≤ +125°C for Extended Symbol Characteristic Min Typ Max Units Conditions VOL Output Low Voltage DO10 I/O ports — — 0.4 V IOL = 2 mA, VDD = 3.3V DO16 OSC2/CLKO — — 0.4 V IOL = 2 mA, VDD = 3.3V VOH Output High Voltage DO20 I/O ports 2.40 — — V IOH = -2.3 mA, VDD = 3.3V DO26 OSC2/CLKO 2.41 — — V IOH = -1.3 mA, VDD = 3.3V TABLE 31-11: ELECTRICAL CHARACTERISTICS: BOR Standard Operating Conditions: 3.0V to 3.6V DC CHARACTERISTICS (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for Industrial -40°C ≤ TA ≤ +125°C for Extended Param No. Symbol Characteristic Min (1) Typ Max Units Conditions BO10 VBOR BOR Event on VDD transition high-to-low BOR event is tied to VDD core voltage decrease 2.40 — 2.55 V — Note 1: Parameters are for design guidance only and are not tested in manufacturing. DS70291E-page 352 © 2011 Microchip Technology Inc.
dsPIC33FJ32MC302/304, dsPIC33FJ64MCX02/X04 AND dsPIC33FJ128MCX02/X04 TABLE 31-12: DC CHARACTERISTICS: PROGRAM MEMORY Standard Operating Conditions: 3.0V to 3.6V DC CHARACTERISTICS (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for Industrial -40°C ≤ TA ≤ +125°C for Extended Param No. Symbol Characteristic Min Typ (1) Program Flash Memory Max Units Conditions D130 EP Cell Endurance 10,000 — — E/W -40°C to +125°C D131 VPR VDD for Read VMIN — 3.6 V VMIN = Minimum operating voltage D132B VPEW VDD for Self-Timed Write VMIN — 3.6 V VMIN = Minimum operating voltage D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications are violated, -40°C to +125°C D135 IDDP Supply Current during Programming — 10 — mA — D136a TRW Row Write Time 1.32 — 1.74 ms TRW = 11064 FRC cycles, TA = +85°C, See Note 2 D136b TRW Row Write Time 1.28 — 1.79 ms TRW = 11064 FRC cycles, TA = +125°C, See Note 2 D137a TPE Page Erase Time 20.1 — 26.5 ms TPE = 168517 FRC cycles, TA = +85°C, See Note 2 D137b TPE Page Erase Time 19.5 — 27.3 ms TPE = 168517 FRC cycles, TA = +125°C, See Note 2 D138a TWW Word Write Cycle Time 42.3 — 55.9 µs TWW = 355 FRC cycles, TA = +85°C, See Note 2 D138b TWW Word Write Cycle Time 41.1 — 57.6 µs TWW = 355 FRC cycles, TA = +125°C, See Note 2 Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. 2: Other conditions: FRC = 7.37 MHz, TUN = b'011111 (for Min), TUN = b'100000 (for Max). This parameter depends on the FRC accuracy (see Table 31-19) and the value of the FRC Oscillator Tuning register (see Register 9-4). For complete details on calculating the Minimum and Maximum time see Section 5.3 “Programming Operations”. TABLE 31-13: INTERNAL VOLTAGE REGULATOR SPECIFICATIONS Standard Operating Conditions (unless otherwise stated): Operating temperature -40°C ≤ TA ≤ +85°C for Industrial -40°C ≤ TA ≤ +125°C for Extended Param No. Symbol Characteristics Min Typ Max Units Comments CEFC External Filter Capacitor Value 4.7 10 — μF Capacitor must be low series resistance (< 5 ohms) © 2011 Microchip Technology Inc. DS70291E-page 353
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