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dsPIC33FJ32MC302/304, dsPIC33FJ64MCX02/X04 AND dsPIC33FJ128MCX02/X04 REGISTER 5-2: NVMKEY: NONVOLATILE MEMORY KEY REGISTER U-0 U-0 U-0 U-0 U-0 U-0 U-0 U-0 — — — — — — — — bit 15 bit 8 W-0 W-0 W-0 W-0 W-0 W-0 W-0 W-0 NVMKEY bit 7 bit 0 Legend: R = Readable bit W = Writable bit U = Unimplemented bit, read as ‘0’ -n = Value at POR ‘1’ = Bit is set ‘0’ = Bit is cleared x = Bit is unknown bit 15-8 Unimplemented: Read as ‘0’ bit 7-0 NVMKEY: Key Register (write-only) bits DS70291E-page 80 © 2011 Microchip Technology Inc.
dsPIC33FJ32MC302/304, dsPIC33FJ64MCX02/X04 AND dsPIC33FJ128MCX02/X04 5.4.1 PROGRAMMING ALGORITHM FOR FLASH PROGRAM MEMORY Programmers can program one row of program Flash memory at a time. To do this, it is necessary to erase the 8-row erase page that contains the desired row. The general process is: 1. Read eight rows of program memory 2. (512 instructions) and store in data RAM. Update the program data in RAM with the desired new data. 3. Erase the block (see Example 5-1): a) Set the NVMOP bits (NVMCON) to ‘0010’ to configure for block erase. Set the ERASE (NVMCON) and WREN (NVMCON) bits. b) Write the starting address of the page to be erased into the TBLPAG and W registers. c) Write 0x55 to NVMKEY. d) Write 0xAA to NVMKEY. e) Set the WR bit (NVMCON). The erase cycle begins and the CPU stalls for the duration of the erase cycle. When the erase is done, the WR bit is cleared automatically. EXAMPLE 5-1: ERASING A PROGRAM MEMORY PAGE 4. Write the first 64 instructions from data RAM into the program memory buffers (see Example 5-2). 5. Write the program block to Flash memory: a) Set the NVMOP bits to ‘0001’ to configure for row programming. Clear the ERASE bit and set the WREN bit. b) Write 0x55 to NVMKEY. c) Write 0xAA to NVMKEY. d) Set the WR bit. The programming cycle begins and the CPU stalls for the duration of the write cycle. When the write to Flash memory is done, the WR bit is cleared automatically. 6. Repeat steps 4 and 5, using the next available 64 instructions from the block in data RAM by incrementing the value in TBLPAG, until all 512 instructions are written back to Flash memory. For protection against accidental operations, the write initiate sequence for NVMKEY must be used to allow any erase or program operation to proceed. After the programming command has been executed, the user application must wait for the programming time until programming is complete. The two instructions following the start of the programming sequence should be NOPs, as shown in Example 5-3. ; Set up NVMCON for block erase operation MOV #0x4042, W0 ; MOV W0, NVMCON ; Initialize NVMCON ; Init pointer to row to be ERASED MOV #tblpage(PROG_ADDR), W0 ; MOV W0, TBLPAG ; Initialize PM Page Boundary SFR MOV #tbloffset(PROG_ADDR), W0 ; Initialize in-page EA[15:0] pointer TBLWTL W0, [W0] ; Set base address of erase block DISI #5 ; Block all interrupts with priority
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