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dsPIC33FJ32MC302/304, dsPIC33FJ64MCX02/X04 AND dsPIC33FJ128MCX02/X04<br />

TABLE 32-5: DC CHARACTERISTICS: DOZE CURRENT (IDOZE)<br />

DC CHARACTERISTICS<br />

Parameter<br />

No.<br />

Typical (1)<br />

Max<br />

Standard Operating Conditions: 3.0V to 3.6V<br />

(unless otherwise stated)<br />

Operating temperature -40°C ≤ TA ≤ +150°C for High Temperature<br />

Doze<br />

Ratio<br />

HDC72a 39 45 1:2 mA<br />

Units Conditions<br />

HDC72f 18 25 1:64 mA +150°C 3.3V 20 MIPS<br />

HDC72g 18 25 1:128 mA<br />

Note 1: Parameters with Doze ratios of 1:2 and 1:64 are characterized, but are not tested in manufacturing.<br />

TABLE 32-6: DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS<br />

DC CHARACTERISTICS<br />

Param<br />

No.<br />

Standard Operating Conditions: 3.0V to 3.6V<br />

(unless otherwise stated)<br />

Operating temperature -40°C ≤ TA ≤ +150°C for High Temperature<br />

Symbol Characteristic Min Typ Max Units Conditions<br />

VOL Output Low Voltage<br />

HDO10 I/O ports — — 0.4 V IOL = 1 mA, VDD = 3.3V<br />

HDO16 OSC2/CLKO — — 0.4 V IOL = 1 mA, VDD = 3.3V<br />

VOH Output High Voltage<br />

HDO20 I/O ports 2.40 — — V IOH = -1 mA, VDD = 3.3V<br />

HDO26 OSC2/CLKO 2.41 — — V IOH = -1 mA, VDD = 3.3V<br />

TABLE 32-7: DC CHARACTERISTICS: PROGRAM MEMORY<br />

Standard Operating Conditions: 3.0V to 3.6V<br />

DC CHARACTERISTICS<br />

(unless otherwise stated)<br />

Operating temperature -40°C ≤ TA ≤ +150°C for High Temperature<br />

Param<br />

No.<br />

Symbol Characteristic (1) Program Flash Memory<br />

Min Typ Max Units Conditions<br />

HD130 EP Cell Endurance 10,000 — — E/W -40°C to +150°C (2)<br />

HD134 TRETD Characteristic Retention 20 — — Year 1000 E/W cycles or less and no<br />

other specifications are violated<br />

Note 1: These parameters are assured by design, but are not characterized or tested in manufacturing.<br />

2: Programming of the Flash memory is not allowed above 125°C.<br />

© 2011 Microchip Technology Inc. DS70291E-page 399

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