Activity Report 2010 - CNRS

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6 – NANO- CHARACTERISATION AND NANO-METROLOGY 23 In situ X-ray investigation of growing semiconductor nanowires 24 New generation of nano-detectors for astrophysics 24 Scanning gate Nanoelectronics 25 Superconducting Nanostructures 25 3D coherent diffractive imaging at the nanometer scale 26 7 – NANO APPROACHES TO LIFE SCIENCES 27 Micro- and nano Fabrication for the Life Sciences 27 Contribution of 3D micro-environment to cell adhesion 27 Nanodroplet chip for controlled assembly of lipid bilayers and electrical detection of single-protein activity 27 Medical Applications of the Nanobiosciences 28 Second harmonic imaging of potentials in nanoscale neuronal structures 28 Innovative biochips to detect and screen biological cells 29 Biomimetic artificial membrane systems for generating electro-chemical energy 29 Implantable brain computer interface 31 8 – NANOMODELING, THEORY & SIMULATION 33 Electronic properties 33 Thermal properties 34 Growth, patterning, defects & structure of nano-objects. 35 9 – TECHNOLOGICAL FACILITIES 37 The Network 37 The Nanofabrication Facility 37 The Nanocharacterization Facility 38 The Nano-Chemistry and Biology Facility 40 The Numerical Simulation Facility 41 Funding of the network 41 Conclusions 42 10 - EDUCATION AND SCIENTIFIC ANIMATION 43 The Foundation monthly Seminars 43 The Foundation workshops 43 The Foundation’s Thesis Prize 43 Call for proposals “Education and Scientific Animation” 44 PhD students & research training 45 Physics Olympiads 46 Thesis Prize Award Ceremonies 47 List of the Foundation’s monthly Seminars Erreur ! Signet non défini.48 List of the Foundation’s workshops Erreur ! Signet non défini.49 List of the Quantum Nanoelectronics Seminars Erreur ! Signet non défini.53
1 - QUANTUM NANOELECTRONICS Moore’s law has been the key driver for microelectronics scaling and performance improvement over the past decades. The basic operation of nano field-effecttransistors has roughly been kept the same as its micrometric counterpart. However when all typical dimensions of the device (gate length, width or channel thickness) are within the nanometer range, quantum physics tends to rule the electric characteristics: quantum confinement induces quantification of the energy levels within the channel, tunnel current flows through the gate oxide or through the source-to-drain barrier. In the framework of CMOS based microelectronics, these quantum effects have to be taken into account to design reliable and efficient circuits, where they are mostly considered as parasitic. In this context, the ability of Si-CMOS based logic to continue improving performance while increasing density is more and more questioned: variability and power consumptions are two key knobs that can rapidly be turned into show stoppers. A growing field of interest is proposing to exploit the new emergent quantum effects rather than being spoiled by them: this is the goal of quantum nanoelectronics. There is a widely open field of research where quantum mechanical effects are very useful and promising to design new devices or functions. Charge quantization, interference effects and quantum superposition of states are examples of effects which are investigated. Benefiting from the huge technological developments of microelectronics, the ability to fabricate nanostructures, such as nanowires; quantum box; 2D electron gas; or tunnel and Josephson nanojunctions, on a large variety of materials, and the development of new experimental techniques open a wide field of investigation in the domain of quantum nanoelectronics. Beyond CMOS: Quantum coherent phenomena Chair of Excellence 2007: Leonid GLAZMAN Coordinator: Manuel HOUZET (INAC/SPSMS). Prof. Leonid GLAZMAN is a leading theorist from Yale University, specialised in the field of quantum coherent phenomena in mesoscopic and nanoscopic systems. He comes regularly to Grenoble for long-term stays, and develops close collaborations with local theorists and experimentalists. There are some examples of the topics discussed during his stays: Kondo effect in a dot with superconducting leads, spin-orbit interactions, kinetics of SNS junctions , electron transport in Si-As nanostructures theory of electron transport in carbon nanotubes with Prof. A. ANDREEV, persistent current fluctuations and Josephson current noise, counterpart of the Shapiro steps for a blockaded Josephson junction, impedance of a superconductor with magnetic impurities, analogs of Kondo effect in superconducting nano devices, non-equilibrium Kondo problem and double-dot Kondo problem, transport in mesoscopic spin glasses, and superconductivity in Boron doped diamond. The project is very lively and led to the organization of several workshops: “Electronic noise and relaxation in nanostructures” (April 2011) and “Superconducting hybrids: from conventional to exotic” (September 2011). FURTHER READING: SCIENTIFIC REPORT Phys. Rev. A 80, 043611 (2009) Dynamic response of 1D bosons in a trap Phys. Rev.Lett. 104, 116403 (<strong>2010</strong>) The fate of 1D spin-charge separation away from Fermi points Phys. Rev. B 82, 161417(R) (<strong>2010</strong>) Distribution function of persistent current Phys. Rev. B 83, 075401 (2011) Single-dopant resonance in a single-electron transistor Grenoble benefits from a unique environment where some of the best technological facilities live close by worldwide known simulation and characterization teams. This enhances fruitful and healthy collaborations among several laboratories belonging to the Foundation’s network, such as LPMMC, LETI, IMEP-LAHC, INAC, Institut Néel... Fig.1: Leonid GLAZMAN, Chair of Excellence 2007 CONTACTS Maud VINET maud.vinet@cea.fr Tel: +33 4 38 78 90 87 Olivier BUISSON olivier.buisson@grenoble.cnrs.fr Tel: +33 4 76 88 90 66 3
Page 3 and 4: Date of publication: May 2011 We wo
Page 5: Nanosciences Foundation Activity Re
Page 9 and 10: Part I: ACHIEVEMENTS & PROSPECTS Th
Page 11 and 12: THE NANOSCIENCES FOUNDATION AT THE
Page 13 and 14: OUTSTANDING BENEFITS CATALYZED BY T
Page 15 and 16: The laureates of the 2010 Chairs of
Page 17 and 18: ‘Mobilité d’Excellence’: a n
Page 19 and 20: INTEGRATION ON SITE BETWEEN BASIC R
Page 21 and 22: OVERVIEW Fig.3: LANEF framework. Ba
Page 23 and 24: The Nanosciences Foundation budget
Page 25 and 26: The evolution of the funding progra
Page 27 and 28: OVERVIEW Fig. 6: Total number of vi
Page 29 and 30: ACKNOWLEDGEMENTS One couldn’t fin
Page 31: Part II: SCIENTIFIC REPORT 1 - QUAN
Page 35 and 36: Core/shell nanowires: conductance C
Page 37 and 38: 2 - NANOMAGNETISM AND SPINTRONICS B
Page 39 and 40: than 10 8 V/m and to compare this t
Page 41 and 42: sites. The calculations indicate th
Page 43 and 44: 3 - NANOPHOTONICS The optical prope
Page 45 and 46: Cavity-feeding : decoherence as a r
Page 47 and 48: 4 - MOLECULAR ELECTRONICS Molecular
Page 49 and 50: 5 - NANOMATERIALS, NANOASSEMBLY AND
Page 51 and 52: Phase-change memory RTRA Project 20
Page 53 and 54: 6 - NANO- CHARACTERISATION AND NANO
Page 55 and 56: when compared, for example, to the
Page 57 and 58: 7 - NANO APPROACHES TO LIFE SCIENCE
Page 59 and 60: Innovative biochips to detect and s
Page 61 and 62: Implantable brain computer interfac
Page 63 and 64: 8 - NANOMODELING, THEORY & SIMULATI
Page 65 and 66: Growth, patterning, defects & struc
Page 67 and 68: 9 - TECHNOLOGICAL FACILITIES Create
Page 69 and 70: CRG: The French Cooperative Researc
Page 71 and 72: The Numerical Simulation Facility T
Page 73 and 74: 10 - EDUCATION AND SCIENTIFIC ANIMA
Page 75 and 76: Q-NET: a new European Initial Train
Page 77 and 78: Thesis Prize Award Ceremonies 2009
Page 79 and 80: 2010 Speaker From Date Title Resear
Page 81 and 82: Workshop “Super Resolution Optica
Page 83 and 84:
Workshop “Electronic Noise and Re
Page 85 and 86:
Workshop « New trends in Electrica
Page 87 and 88:
List of the Quantum Nanoelectronics
Page 89 and 90:
Hélène LE SUEUR Laboratoire de Ph
Page 91:
Quantum Nanoelectronics Seminars in
Page 94 and 95:
Invitations to talk at seminars: "
Page 96 and 97:
- Anton ANDREEV (University of Wash
Page 98 and 99:
Cellulose Hybrid block copolymers /
Page 100 and 101:
PART 3 S. J. C. Yates, J. J. A. Bas
Page 102 and 103:
D. A. Stewart, I. Savic, and N. Min
Page 104 and 105:
DISPOGRAPH / RTRA project Post-doct
Page 106 and 107:
2009 Call for Proposals MUSCADE Cha
Page 108 and 109:
Piotr Laczkowski, Danny Hykel, Serg
Page 111:
Part IV: SUPPLEMENTS Appendix 1: th
Page 114 and 115:
Appendix 2: the Foundation’s boar
Page 116 and 117:
Appendix 4: the Steering Committee
Page 118 and 119:
RTRA projects support Major topic A
Page 120 and 121:
Appendix 6: 2010 Call for Proposals
Page 122 and 123:
Education and Scientific Animation
Page 124 and 125:
2008 Call for Proposals Name Nation
Page 126 and 127:
Appendix 8: List of the Post Doc Fe
Page 128 and 129:
Appendix 9: List of the PhD student
Page 130 and 131:
PhD students supported in 2010 Name
Page 132 and 133:
Appendix 11: List of the Reviewers
Page 134 and 135:
2010 Call for Proposals Reviewer La
Page 136 and 137:
Nom du laboratoire Département de
Page 138 and 139:
Nom du laboratoire GRENOBLE INSTITU
Page 140 and 141:
Nom du laboratoire Institut de Micr
Page 142 and 143:
Nom du laboratoire Institut Fourier
Page 144 and 145:
Nom du laboratoire Institut Néel I
Page 146 and 147:
Nom du laboratoire Laboratoire d'In
Page 148 and 149:
Nom du laboratoire Laboratoire de P
Page 150 and 151:
SUPPLEMENTS 5 : Très nombreuses vi
Page 152 and 153:
Nom du laboratoire Laboratoire Inte
Page 154 and 155:
Nom du laboratoire Laboratoire Nati
Page 156 and 157:
Nom du laboratoire Techniques de l
Page 158 and 159:
SUPPLEMENTS 48
Page 160:
HIGHLIGHTS QUANTUM NANOELECTRONICS:
Page 163 and 164:
FIB NANO- TOMOGRAPHY OF DEFECTS IN
Page 165 and 166:
DETECTING SINGLE NANOPARTICLE MAGNE
Page 167 and 168:
QUANTUM HETEROSTRUCTURES IN II-VI N
Page 169 and 170:
ELECMOL’10 CONFERENCE An importan
Page 171 and 172:
CRISTAL PHASE TRANSITIONS IN PRESSU
Page 173 and 174:
SCANNING GATE NANOELECTRONICS In th
Page 175 and 176:
CONTROL OF THERMAL CONDUCTIVITY AT
Page 178 and 179:
Roland HERINO (past Director) Jean-
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