biographical summary of robert j. nemanich - Department of Physics ...

80. “Defects in single-crystal silicon induced by hydrogenation,” N.M. Johnson, F.A. Ponce,
R.A. Street, and R.J. Nemanich, Physical Review B 35, 4166-4169 (1987).
1988
81. “Raman Scattering Characterization of Carbon Bonding in Diamond and Diamond-Like
Thin Films,” R.J. Nemanich, J.T. Glass, G. Lucovsky, and R.E. Shroder, J. Vac. Sci.
Technol. A6, 1783-1787 (1988).
82. “Strain in Graded Thickness GaAs/Si Heteroepitaxial Structures Grown with a Buffer
Layer,” R.J. Nemanich, D.K. Biegelsen, R.A. Street, B. Downs, B.S. Krusor, and D.R.
Yingling, Heteroepitaxay on Silicon: Fundamentals, Structure, and Devices, edited by
H.K. Choi, R. Hull, H. Ishiwara, R.J. Nemanich, (Mater. Res. Soc. Symp. Proc. 116, Reno,
Nevada, p. 245-250 (1988).
83. “Precursor Structures in the Formaiton of Diamond Films,” R.J. Nemanich, R.E. Shroder,
J.T. Glass, and G. Lucovsky, Proc. 19th International Conf. on the Physics of
Semiconductors, edited by W. Zawadaki, p. 515-518 (1988).
84. “Raman analysis of the Composite Structures in Diamond Thin Films,” R.E. Shroder, R.J.
Nemanich, and J.T. Glass, Proc. of SPIE Diamond Optics Symposium, Proc. SPIE 969, 79
(1988).
1989
85. “Raman Scattering Characterization of Titanium Silicide Formation,” R.J. Nemanich, R.
Fiordalice, and H. Jeon, IEEE Journal of Quantum Electronics 25, 997-1002 (invited
contribution) (1989).
86. “Heteroepitaxial Growth and Characterization of GaAs on Silicon-on Sapphire and
Sapphire Substrates,” T.P. Humphreys, C.J. Miner, J.B. Posthill, K.Das, M.K.
Summerville, R.J. Nemanich, C.A. Sukow, and N.R. Parikh, Appl. Phys. Lett. 54, 1687-
1689 (1989).
87. “Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Siliconon-Sapphire
Substrates,” T.P. Humphreys, N.R. Parikh, K. Das, J.B. Posthill, R.J.
Nemanich, M.K. Summerville, C.A. Sukow and C.J. Miner, Advances in Materials,
Precessing and Devices in III-V Compound Semiconductors, edited by Devendra K.
Sadana, Lester E. Eastman and Russell Dupuis. (Mater. Res. Soc. Symp. Proc., 144,
Boston, Massachusetts, p. 195-201 (1989).
88. “Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and
Insulating Substrates, III-V Heterostructures for Electronic/Photonic Devices,” T.P.
Humphreys, K. Das, N.R. Parikh, J.B. Posthill, R.J. Nemanich, C.J. Miner, M.K.
Summerville, P.L. Ross, and R.J. Markunas, III-V Heterostructures for
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