biographical summary of robert j. nemanich - Department of Physics ...

317. “Germanium Segregation in the Co/SiGe Si(001) thin film system,” Peter T. Goeller,
Boyan I. Boyanov, Dale Sayers, Robert J. Nemanich, Alline F. Myers and Eric B. Steel. J.
Mater. Res. 14, (11), 4372-4384 (1999).
318. “An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical
solution deposition technique,” S. H. Kim, D. J. Kim, K. M. Lee, M. Park, A. I. Kingon, R.
J. Nemanich, J. Im and S. K. Streiffer. J. Mater. Res. 14, (11), 4395-4401 (1999).
319. “Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles,”
M. Park, S. M. Camphausen, A. F. Myers, P. T. Barletta, V. Sakhrani, L. Bergman, R. J.
Nemanich and J. J. Cuomo. Materials Letters 41, (5), 229-233 (1999).
320. “Valence Band Discontinuity of the (0001) 2H-GaN / (111) 3C-SiC Interface,” S. W. King,
R. F. Davis, C. Ronning and R.J. Nemanich, J. Electronic Mater. 28, (12), L34-L37
(1999).
321. “Reduction of the Phase Transition Temperature of TiSi2 on Si(111) using a Ta Interlayer,”
Bokhee Jung, Young Do Kim, Woochul Yang, R. J. Nemanich and Hyeongtag Jeon,
Advanced Interconnects and Contacts, editors: D. C. Edelstein, T. Kikkawa, M. C.
Ozturk, K. N. Tu, and E. J. Weitzman, (Mater. Res. Soc. Symp. Proc. Vol. 564, p. 59-64
(1999). Spring 1999, San Francisco, CA).
322. “Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers,” M. E. Ware and R. J.
Nemanich. Thin Films: Stresses and Mechanical Properties VIII, edited by R. Vinci, O.
Kraft, N. Moody, P. Besser, and E. Shaffer, II. (Mater. Res. Soc. Symp. Proc. Vol. 594 ,
p.163-168 (1999). Boston, MA.
323. “Electrical Properties of Nanoscale TiSi2 Islands on Si,” Jaehwan Oh, Hoon Ham, Peter
Laloli and R. J. Nemanich, Self-Organized Processes in Semiconductor Alloys, edited by
A. Mascarenhas, D. Follstaedt, T. Suzuki and B. Joyce, (Mater. Res. Soc. Vol. 583, p. 111-
116 (1999). Boston, MA.
324. “Real-Time Observation of Pt-Si Liquid Micro-Droplet Migration by Photo-Electron
Emission Microscopy,” W. Yang, H. Ade and R. J. Nemanich. Materials Issues and
Modeling for Device Nanofabrication, Editors L. Merhari, L. Wille, K. Gonsalves, M.
Gyure, S. Matsui, and L. Whitman. (Mater. Res. Soc. Symp. Proc. Vol. 584 p. 201-206,
(1999). Boston, MA.
325. “Correlation of Photo Electron Emission Microscopy and Field Emission from Nitrogen-
Doped Diamond Films,” R. J. Nemanich, F. A. M. Koeck, S. L. English and A. T. Sowers,
Sixth International Symposium on Diamond Materials, Electrochemical Society
Proceedings Vol. 99-32 Honolulu, Hawaii, p. 206-215 1999.
326. “The Role of Oxide Impurities in Surface Residue Nucleation Due to Anhydrous
HF/Methanol Vapor Phase Cleaning,” R. J. Carter, J. R. Hauser, and R. J. Nemanich, Sixth
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