biographical summary of robert j. nemanich - Department of Physics ...
biographical summary of robert j. nemanich - Department of Physics ...
biographical summary of robert j. nemanich - Department of Physics ...
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210. “EXAFS and XRD studies <strong>of</strong> phase formation <strong>of</strong> Co in reactions with Si-Ge alloys,” Z.<br />
Wang, R.J. Nemanich, D.E. Sayers, Physica B 208 & 209, 567, (1995).<br />
211. “Local structure studies <strong>of</strong> (Ti1-xZrx)Si2 thin films on Si(111),” Y. Dao, A.M. Edwards, R.J.<br />
Nemanich, and D.E. Sayers. Physica B 208 & 209, 513-514, (1995).<br />
212. “Film Thickness in the Ti-Si1-xGex Solid Phase Reaction,” D.B. Aldrich, Holly L. Heck,<br />
Y.L. Chen, D.E. Sayers, and R.J. Nemanich. J. <strong>of</strong> Appl. Phys. 78, 4958-4965 (1995).<br />
213. “Effect <strong>of</strong> Composition on Phase Formation and Morphology in Ti-Si(1-x)Ge(x) Solid Phase<br />
Reactions,” D.B. Aldrich, Y.L. Chen, D.E. Sayers, R.J. Nemanich, S.P. Ashburn and M.C.<br />
Ozturk. J. Mater. Res. 10, (11), p. 2849-2863, (1995).<br />
214. “Micro-Raman Analysis <strong>of</strong> Stress State in Diamond Thin Films,” Leah Bergman, K.F.<br />
Turner, P.W. Morrison, and R.J. Nemanich. Applications <strong>of</strong> Diamond Films and Related<br />
Materials: 3rd International Conference, 1995, Editors: A. Feldman, Y Tzeng, W.A.<br />
Yarbrough, M. Yoshikawa, and M. Murakawa, (NIST, Washington, p 453-456 (1995).<br />
215. “Negative Electron Affinity Effects and Schottky Barrier Height Measurements <strong>of</strong> Cobalt<br />
on DIamond (100) Surfaces,” P.K. Baumann, and R.J. Nemanich. Applications <strong>of</strong><br />
Diamond Films and Related Materials: 3rd International Conference, 1995, Editors: A.<br />
Feldman, Y. Tzeng, W.A. Yarbrough, M. Yoshikawa, and M. Murakawa, (NIST,<br />
Washington, p. 41-44 (1995).<br />
216. “Diamond Electron Affinity Surfaces, Structures and Devices,” R.J. Nemanich, P.K.<br />
Baumann and J. Van der Weide. Applications <strong>of</strong> Diamond Films and Related MAterials:<br />
3rd International Conference, 1995, Editors: A. Feldman, Y. Tzeng, W.A. Yarbrough, M.<br />
Yoshikawa, and M. Murakawa, (NIST, Washington, p. 17-24 (1995).<br />
217. “Removal <strong>of</strong> SiO2 from Si(100) Surface by a Remote RF H2/SiH4 Plasma Prior to Epitaxial<br />
Growth,” J.P. Barnak, H. Ying, Y.L. Chen, J. Montgomery, and R.J. Nemanich, Ultraclean<br />
Semiconductor Procesing Technology and surface Chemical Cleaning and Passivation,<br />
edited by M. Liehr, M. Heyns, M. Hirose, and H. Parks. (Mater. Res. Soc. Symp. Proc.,<br />
386), Pittsburgh, PA, p 351-356 (1995).<br />
218. “Removal <strong>of</strong> Flourine from Si(100) Surface by a Remote RF Hydrogen Plasma,” J.P.<br />
Barnak, S. King, J. Montgomery, Ja-Hum Ku, and R.J. Nemanich. Ultraclean<br />
Semiconductor Procesing Technology and surface Chemical Cleaning and Passivation,<br />
edited by M. Liehr, M. Heyns, M. Hirose, and H. Parks. (Mater. Res. Soc. Symp. Proc.<br />
386, San Fransisco, CA pp. 357-362 (1995).<br />
219. “RIE Passivation Layer Removal by Remote H-Plasma and H2/SiH4 Plasma Processing,”<br />
Hong Ying, J.P. Barnak, Y.L. Chen, and R.J. Nemanich. Ultra Clean Semiconductor<br />
Processing Technology and Surface Chemical Cleaning and Passivation, edited by M.<br />
Liehr, M. Heyns, M. Hirose, H. Parks. (Mater. Res. Soc. Symp. Proc., 386, San Fransisco,<br />
CA, pp 285-290 (1995).<br />
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