biographical summary of robert j. nemanich - Department of Physics ...
biographical summary of robert j. nemanich - Department of Physics ...
biographical summary of robert j. nemanich - Department of Physics ...
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199. “Recombination Processes <strong>of</strong> the Broadband and 1.681 eV Optical Centers in Diamond<br />
Films,” L. Bergman, M.T. McClure, J.T. Glass and R.J. Nemanich, Diamond SiC Wide<br />
Bandgap Semiconductors, edited by Calvin H. Carter,, Jr., Gennady Gildenblat, Shuji<br />
Nakamura and Robert J. Nemanich (Mater. Res Soc. Proc. Symp. 339, San Fransisco, CA,<br />
p. 663-668 (1994).<br />
200. “Structural and electrcal properties <strong>of</strong> (Ti0.9Zr0.1)Si2,” Y. Dao, A.M. Edwards, H. Ying,<br />
D.E. Sayers, and R.J. Nemanich. Appl. Phys. Lett. 65, 2413-2415 (1994).<br />
201. “Influence <strong>of</strong> Interfacial Hydrogen and Oxygen on the Schottky Barrier <strong>of</strong> Nickel on (111)<br />
and (001) Diamond Surfaces,” J. Van der Weide and R.J. Nemanich, Physical Review B49,<br />
13629-13637 (1994).<br />
202. “Negative Electron Affinity Effects on the Diamond (100) Surface,” J. Van der Weide, Z.<br />
Zhang, P.K. Baumann, M.G. Wensell, J. Bernholc and R.J. Nemanich, Physical Review<br />
B50, 5803-5806, (1994).<br />
203. “Bond Length Relaxation in Si1-xGex Alloys,” D.B. Aldrich, R.J. Nemanich and D.E.<br />
Sayers, Physical Review B 50, p.15 026-15 033, (1994).<br />
204. “Highly Oriented Diamond Films on Si: Growth, Characterization and Devices,” B.R.<br />
Stoner, D.M. Malta, A.J. Tessmer, J. Holmes, D.L. Dreifus, R.C. Glass, A. Sowers and R.J.<br />
Nemanich. SPIE Vol 2151, p. 2-13, Diamond-Film Semiconductors (1994).<br />
205. “Determination <strong>of</strong> excess phosphorous in low-temperature GaP grown by gas source<br />
molecular beam epitaxy,” Y. He, N.A. El-Marsy, J. Ramdani, S.M. Bedair, T.L.<br />
McCormick, R.J. Nemanich and E.R. Weber, Appl. Phys. Lett. 65, 1-3 (1994).<br />
1995<br />
206. “The structure and property characteristics <strong>of</strong> amorphous/nanocrystalline silicon produced<br />
by ball milling,” T.D. Shen, C.C. Koch, T.L. McCormick, R.J. Nemanich, J.Y. Huang and<br />
J.G. Huang, J. Mater. Res. 10, 139-148 (1995).<br />
207. “Negative Electron Affinity Effects on H Plasma Exposed Diamond (100) Surfaces,” P.K.<br />
Baumann and R.J. Nemanich. Diamond and Related Materials 4, 802-805 (1995).<br />
208. “Characterization <strong>of</strong> a slot antenna microwave plasma source for hydrogen plasma<br />
cleaning,” D. Korzec, F. Werner, A. Brockhaus, J. Engemann, T.P. Schneider and R.J.<br />
Nemanich. J. <strong>of</strong> Vacuum Science and Technology A13, 2074-2085 (1995).<br />
209. “Stability <strong>of</strong> C54 Titanium Germanosilicide on a Silicon-Germanium Alloy Substrate,”<br />
D.B. Aldrich, Y.L. Chen, D.E. Sayers, R.J. Nemanich, S.P. Ashburn and M.C. Ozturk. J.<br />
Appl. Phys. 77, 5107-5114 (1995).<br />
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