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biographical summary of robert j. nemanich - Department of Physics ...

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Ade and R. F. Davis. Applied Surface Science 130-132, 694-703 (1998). Proceedings <strong>of</strong><br />

The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces.<br />

285. “Dependence <strong>of</strong> (0001) GaN/AlN valence band discontinuity on growth temperature and<br />

surface reconstruction,” S. W. King, C. Ronning, R. F. Davis, M. C. Benjamin and R. J.<br />

Nemanich, J. Appl. Phys. 84, (4), 2086-2090 (1998).<br />

286. “Co-deposition <strong>of</strong> Cobalt Disilicide on Silicon-Germanium Thin Films,” P. T. Goeller, B. I.<br />

Boyanov, D. E. Sayers and R. J. Nemanich, Presented at Conference on Multigrid Coatings<br />

and Thin Films, San Diego, CA, April 21-25, 1997. Thin Solid Films 320, 206-210 (1998).<br />

287. “Surface Cleaning, Electronic States and Electron Affinity <strong>of</strong> Diamond (100), (111) and<br />

(110) Surfaces,” P. K. Baumann and R. J. Nemanich, Surface Science 409, 320-335<br />

(1998).<br />

288. “In situ studies <strong>of</strong> metal-semiconductor interactions with synchrotron radiaiton,” D. E.<br />

Sayers, P. T. Goeller, B. I. Boyanov and R. J. Nemanich, J. Synchrotron Rad. 5, 1050-<br />

1051, (1998)<br />

289. “Structural and electronic properties <strong>of</strong> boron nitride thin films containing silicon,” C.<br />

Ronning, A. D. Banks, B. L. McCarson, R. Schlesser, Z. Sitar, R. F. Davis, B. L. Ward and<br />

R. J. Nemanich. J. Appl. Phys. 84, (9), 5046-5051, (1998).<br />

290. “Cleaning <strong>of</strong> AlN and GaN Surfaces,” S. W. King, J. P. Barnak, M. D. Bremser, K. M.<br />

Tracy, C. Ronning, R. F. Davis, and R. J. Nemanich. J. Appl. Phys. 84, (9), 5248-5260<br />

(1998).<br />

291. “Electron Emission Characteristics <strong>of</strong> GaN Pyramid Arrays Grown via Organommetallic<br />

Vapor Phase Epitaxy,” B. L. Ward, O. -H. Nam, J. D. Hartman, S. L. English, B. L.<br />

McCarson, R. Schlesser, Z. Sitar, R. F. Davis and R. J. Nemanich. J. Appl Phys. 84, (9),<br />

5238-5242 (1998).<br />

292. “X-ray Photoelectron Diffraction from (3x3) and (√3x√3) R30° (0001)Si 6H-SiC<br />

Surfaces,” S. W. King, C. Ronning, R. F. Davis, R. S. Busby and R. J. Nemanich. J. Appl.<br />

Phys. 84, (11), 6042-6048, (1998).<br />

293. “Piezoelectric measurements with atomic force microscopy,” J. A. Christman, R. R.<br />

Woolcott, Jr., A. I. Kingon, and R. J. Nemanich, Appl. Phys. Lett., 73, (26), 3851-3853<br />

(1998).<br />

294. “A Free Electron Laser - Photoemission Electron Microscope System (FEL-PEEM),” H.<br />

Ade, W. Yang, S. L. English, J. Hartman, R. F. Davis, R. J. Nemanich, V. N. Litvinenko,<br />

I. V. Pinayev, Y. Wu and J. M. J. Madey. Surface Review and Letters 5, (6) 1257-1268<br />

(1998).<br />

42

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