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biographical summary of robert j. nemanich - Department of Physics ...

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William Mackie, Dorota Temple and Junji Itoh (Mater. Res. Soc. Symp. Proc. Vol. 621, p.<br />

R6.4.1-R6.4.7) San Francisco, CA, April (2000).<br />

337. “Thermionic FEEM, PEEM and I/V Measurements <strong>of</strong> N-Doped CVD Diamond Surfaces,”<br />

F. A. M. Koeck, J. M. Garguilo, B. Brown and R. J. Nemanich. Electron-Emissive<br />

Materials, Vacuum Microelectronics and Flat-Panel Displays, edited by Kevin L. Jensen,<br />

Robert J. Nemanich, Paul Holloway, Troy Trottier, William Mackie, Dorota Temple and<br />

Junji Itoh (Mat. Res. Soc. Proc. Vol 621, p. R6.5.1-R6.5.6) San Francisoc, CA April<br />

(2000).<br />

338. “Photo-Emission Electron Microscopy (PEEM) <strong>of</strong> Cleaned and Etched 6H-SiC(0001),” J.<br />

D. Hartman, K. Naniwae, C. Petrich, V. Ramachandran, R. M. Feenstra, R. J. Nemanich<br />

and R. F. Davis, Materials Science Forum 338-342, Pt. 1, 353-6 (2000).<br />

339. “Electron Emission from Carbon Films: Issues <strong>of</strong> Uniformity,” R. J. Nemanich, F. A. M.<br />

Koeck, and J. Garguilo. Proc. <strong>of</strong> First International Symposium on Cold Cathodes, The<br />

Electrochemical Society, Vol. 2000 (28), 193-200. Editors M. Cahay, K. L. Jensen, P. D.<br />

Mumford, J. Yater, R. A. Murphy, D. Temple and V. J. Kapoor, 2000.<br />

340. “Effect <strong>of</strong> Interface Manipulation for MBE Growth <strong>of</strong> AIN on 6H-SiC,” Koichi Naniwae,<br />

Jeff Hartman, Chris Petrich, Robert F. Davis and Robert J. Nemanich. Wide-bandgap<br />

Electronic Devices, Editors: R. J. Shul, F. Ren, M. Murakami, W. Pletschen (Mater. Res.<br />

Soc. Symp. Proc. Vol. 621, p. T5.6 2000).<br />

2001<br />

341. “Ultraviolet Raman Study <strong>of</strong> A1(LO) and E2 Phonons in InxGa1-xN Alloys,” Dimitri<br />

Alexson, Leah Bergman, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N.<br />

A. El-Masry, Fran Adar and R. J. Nemanich, J. Appl. Phys. 89, (1), 798-800 (2001).<br />

342. “Optical Characterization <strong>of</strong> Wide Bandgap Amorphous Semiconductors (a-Si:C:H)-Effect<br />

<strong>of</strong> Hydrogen Dilution,” Minseo Park, C. W. Teng, V. Sakhrani, M. B. McLaurin, R. M.<br />

Kolbas, R. C. Sanwald, R. J. Nemanich, J. J. Hren and J. J. Cuomo, J. Appl. Phys. 89, (2),<br />

1130-37 (2001).<br />

343. “XAFS Studies <strong>of</strong> the Formation <strong>of</strong> Cobalt Silicide on (√3 by √3) SiC(0001),” W. Platow,<br />

D. K. Wood, J. E. Burnette, R. J. Nemanich and D. E. Sayers, J. Synchrotron Rad. 8, 475-<br />

477, (2001).<br />

344. “Formation <strong>of</strong> Cobalt Disilicide Films on (√3 by √3) 6H-SiC (0001),” W. Platow, D. K.<br />

Wood, K. M. Tracy, J. E. Burnette, R. J. Nemanich and D. E. Sayers, Phys. Rev. B 63,<br />

115312-1, 7, (2001).<br />

47

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