biographical summary of robert j. nemanich - Department of Physics ...

267. “Structure and stability of cobalt-silicon-germanium thin films,” Peter T. Goeller, Boyan I.
Boyanov, Dale E. Sayers and Robert J. Nemanich. Nuclear Instruments and Methods in
Physics Research B 133, 84-89 (1997).
268. “Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on
Si (001),” Woochul Yang, F. J. Jedema, H. Ade, and R. J. Nemanich. Thin Solid Films
308-309, 627-633 (1997).
269. “Sublimation growth and characterization of bulk aluminum nitride single crystals,”
Cengiz M. Balkas, Zlatko Sitar, Tsvetanaka Zheleva, L. Bergman, R. J. Nemanich and R.
F. Davis. J. of Crystal Growth 179, 363-370 (1997).
270. “Growth of III-Nitrides via Sublimation and Metalorganic Vapor Phase Epitaxy,” Robert F.
Davis, B. L. Ward, Z. Sitar, T. Zheleva, L. Bergman, I. K. Shmagin, J. F. Muth, R. M.
Kolbas, and R. J. Nemanich. Kovine, Zlitine, Technologije 31, (6), 485-494 (1997).
1998
271. “Electron Emission from Metal Diamond (100), (111) and (110) Interfaces,” P. K. Baumann
and R. J. Nemanich, Diamond Rel. Mat. 7, (2-5), 612-619 (1998).
272. “Electron affinity and Schottky barrier height of metal-diamond (100), (111), and (110)
interfaces,” P. K. Baumann and R. J. Nemanich, J. of Appl. Phys. 83, (4), 2072-2082
(1998).
273. “Raman Analysis of AlxGa1-xN Films,” Leah Bergman, Mitra Dutta, Michael D. Bremser,
Ok-Hyun Nam, William G. Perry, Dimitri Alexson, Robert F. Davis, Cengiz M. Balkas and
Robert J. Nemanich. Nitride Semiconductors, edited by F. A. Ponce, S. P. DenBaars, B. K.
Meyer, S. Nakamura and S. Strite. (Mater. Res. Soc. Symp. Proc., Vol. 482, Boston,
Massachusetts) p. 543-548.
274. “Morphology of Silicon Oxides on Silicon Carbide,” M. L. O’Brien, S. Pejdo and R. J.
Nemanich, Power Semiconductor Materials and Devices, edited by S. J. Pearton, R. J.
Shul, E. Wolfgang, F. Ren, and S. Tenconi. (Mater. Res. Soc. Symp. Proc., Vol. 483,
Spring 1998, San Francisco, CA p. 437-442, (1998).
275. “Electron Emission Properties of Si Field Emitter Arrays Coated with Nanocrystalline
Diamond from Fullerene Precursors,” T. G. McCauley, T. D. Corrigan, A. R. Krauss, O.
Auciello, D. Zhou, D. M. Gruen, D. Temple, R. P. H. Chang, S. English, and R. J.
Nemanich. Covalently Bonded Disordered Thin-Film Materials, edited by M. P. Siegal, W.
I. Milne, J. E. Jaskie (Mater. Res. Soc. Symp. Proc., Vol 498, 1997 Fall Meeting, Boston,
MA. p. 227-232 (1998)
276. “Electron Emission Properties of Diamond and III-V Nitrides,” R. J. Nemanich, P. K.
Baumann, M. J. Benjamin, S. L. English, J. D. Hartman, A. T. Sowers, B. L. Ward and P.
C. Yang. Mat. Issues in Vacuum Microelectronics, edited by W. Zhu, L. S. Pan, T. E.
40