biographical summary of robert j. nemanich - Department of Physics ...

408. “Direct bonding of GaN and SiC; A novel technique for electronic device fabrication,” J.
Lee, R.F. Davis, R.J. Nemanich, Int. J. High Speed Electron. Syst. 14, No.1, 83-105,
(2004).
409. “A novel approach for determining the effective tunneling mass of electrons in HfO2 and
other high-K alternative gate dielectrics for advanced CMOS devices,” C. L. Hinkle, C.
Fulton, R. J. Nemanich, G. Lucovsky. Microelectronic Engineering, 72, 1-4, 257-262,
April 2004. (Proceedings of the 13th Biennial Conference on Insulating Films on
Semiconductors. Barcelona, 18 - 20 June 2003)
410. “Fibrinogen adsorption onto microwave plasma chemical vapor deposited diamond films,”
G.J. Garguilo, B.A. Davis, M. Buddie, F.A.M. Kock, R.J. Nemanich, Diamond and Related
Materials 13, (4-8): 595-599 (2004).
411. “Direct correlation of surface morphology with electron emission sites for intrinsic
nanocrystalline diamond films,” E.M. Kock, J.M. Garguilo, R.J. Nemanich, Diamond and
Related Materials 13, (4-8), 1022-1025 (2004).
412. “Experimental studies of the formation process and morphologies of carbon nanotubes with
bamboo mode structures,” Y.Y.Wang, G.Y. Tang, F.M. Koeck, B. Brown, J.M. Garguilo,
R.J. Nemanich, Diamond and Related Materials 13, (4-8), 1287-1291 (2004).
413. “Polarization dependent electron affinity of LiNbO3 surfaces”, W.-C. Yang, B.J.
Rodriguez, A. Gruverman, R.J. Nemanich. Appl Phys Lett 85, (12), 2316-2318 (2004).
414. “Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and
complex rare earth/transition metal oxides”, G. Lucovsky, J. G. Hong, C. C. Fulton, Y.
Zou, R. J. Nemanich, H. Ade, D. G. Scholm, J. L. Freeouf Phy Stat Sol B, 241 (10), 2221-
2235 (2004).
415. “Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched
between thicker SiO2 layers”, C.L. Hinkle, C. Fulton, R.J. Nemanich and G. Lucovsky,
Appl. Surf. Sci, 234, (1-4), 240-245 (2004).
416. “X-ray absorption spectra fro transition metal high-kappa dielectrics: Final state
differences for intra- and interatomic transitions,” G. Lucovsky, J.G. Hong, C.C. Fulton, Y.
Zou, R.J. Nemanich, H. Ade. J. Vac. Sci. Technol. B 22, 4, 2132-2138 (2004).
2005
417. “Investigation of the mechanism of polarization switching in ferroelectric capacitors by
three- dimensional piezoresponse force microscopy”, Rodriguez BJ, Gruverman A,
Kingon AI, Nemanich RJ, Cross JS, Appl Phys A – Materials Science & Processing, 80, 1,
99-103 (2005). Published on line, 9 July, 2004
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