biographical summary of robert j. nemanich - Department of Physics ...
biographical summary of robert j. nemanich - Department of Physics ...
biographical summary of robert j. nemanich - Department of Physics ...
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2000<br />
International Symposium on Cleaning Technology in Semiconductor Device<br />
Manufacturing, Electrochemical Society Proceedings Vol. 99-36, 137-44, 1999.<br />
327. “Growth and Characterization <strong>of</strong> GaN single crystals,” C. M. Balkas, Z. Sitar, L. Bergman,<br />
I. K. Shmagin, J. F. Muth, R. Kolbas, R. J. Nemanich and R. F. Davis, J. Cryst. Growth<br />
208, 100-106 (2000).<br />
328. “Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulatorsemiconductor<br />
structures,” Griff L. Bilbro and Robert J. Nemanich, Appl. Phys. Lett. 76,<br />
(7), 891-893 (2000).<br />
329. “Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlatice,” Leah<br />
Bergman, Mitra Dutta, M. A. Stroscio, S. M. Komirenko, C. J. Eiting, D. J. H. Lambert, H.<br />
K. Kwon, R. D. Dupuis and R. J. Nemanich, Appl. Phys Lett. 76, (15), 1969-1971 (2000).<br />
330. “Measurement <strong>of</strong> Field Emission from Nitrogen-Doped Diamond Films,” A. T. Sowers, B.<br />
L. Ward, S. L. English and R. J. Nemanich, Diamond and Related Materials 9, (9-10),<br />
1569-73 (2000).<br />
331. “Schottky barrier height and electron affinity <strong>of</strong> titanium on AlN,” B. L. Ward, J.<br />
D.Hartman, E. H. Hurt, K. M. Tracy, R. F. Davis and R. J. Nemanich, J. Vac. Sci. Tech. B<br />
18, (4), 2082-2087 (2000).<br />
332. “Effects <strong>of</strong> a Ta interlayer on the phase transition <strong>of</strong> TiSi2 on Si (111),” Hyeongtag Jeon,<br />
Bokhee Jung, Young Do Kim, Woochul Yang and R. J. Nemanich, J. Appl. Phys. 88, (5),<br />
2467-2471 (2000).<br />
333. “Surface Residue Islands Nucleation in Anhydrous HF/Alcohol Vapor Processing <strong>of</strong> Si<br />
Surfaces,” Richard J. Carter, John R. Hauser and Robert J. Nemanich, J. Electrochem. Soc.<br />
147, (9), 3512-3518, (2000).<br />
334. “Spatial Variation <strong>of</strong> Ferroelectric Properties in Pb(Zr0.3Ti0.7)03 Thin Films Studied by<br />
Atomic Force Microscopy,” James A. Christman, Seung-Hyun Kim, Hiroshi Maiwa, Jon-<br />
Paul Maria, Angus I. Kingon, Brian Rodriguez and R. J. Nemanich, J. Appl. Phys. 87, (11),<br />
8031-8034 (2000).<br />
335. “Photoemission <strong>of</strong> the SiO2-SiC Hetero-Interface,” M. L. O’Brien, C. Koitzsch and R. J.<br />
Nemanich, Proc. <strong>of</strong> Int. Conf. on Silicon Dielectric Interfaces, and J. Vac. Sci. Tech. B 18,<br />
(3), 1776-1784 (2000).<br />
336. “Anomalous Field Enhancement in Planar Semiconducting Cold Cathodes from<br />
Spontaneous Ordering in the Accumulation Region,” Griff L. Bilbro and Robert J.<br />
Nemanich. Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel<br />
Displays, edited by Kevin L. Jensen, Robert J. Nemanich, Paul Holloway, Troy Trottier,<br />
46
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