biographical summary of robert j. nemanich - Department of Physics ...

190. “Structural Investigation of the Initial Interface Region Formed by Thin Zirconium Films
on Silicon (111), A. M. Edwards, Y. Dao, K. M. Kemner, R. J. Nemanich and D. E. Sayers,
J. Appl. Phys. 76, 4630-4635, (1994).
191. “Angle-Resolved Photoemission of Diamond (111) and (100) Surfaces; Negative Electron
Affinity and Band Structure Measurements,” J. van der Weide and R. J. Nemanich.
Presented at the 21st Conference on the Physics and Chemistry of Semiconductor
Interfaces - Mohonk, New York, January 24-28, 1994, J. Vac. Sci. Technol. B12, 2475-
2479, (1994).
192. “The Origin of the Broadband Luminescence and the Effect of Nitrogen Doping on the
Optical Properties of Diamond Films,” L. Bergman, M. T. McClure, J. T. Glass and R. J.
Nemanich. J. Appl. Phys. 76, 3020-3027 (1994).
193. “Observation of a Negative Electron Affinity for Heteroeptaxial AlN on (6H)-
SiC(0001),” M. C. Benjamin, C. Wang, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett.
64, 3288-3290 (1994).
194. “Hydrogen Plasma Cleaning Prior to Low Temperature Gate Oxide Deposition in Cluster
Fabricated Mosfets,” J. S. Montgomery, J. P. Barnak, A. Bayoumi, J. R. Hauser, and R. J.
Nemanich, in Cleaning Technology in Semiconductor Device Manufacturing, edited by J.
Ruzyllo and R. E. Novak, ECS Proceedings Vol. PV 94-7, (Electrochemical Soc.,
Pennington, NJ) p. 296-306, (1994).
195. “Reduction of Surface Roughening and Subsurface Defects in H-Plasma Cleaning of
Si(100),” T. P. Schneider, J. S. Montgomery, H. Ying, J. P. Barnak, Y. L. Chen, D. M.
Maher and R. J. Nemanich, Cleaning Technology in Semiconductor Device Manufacturing,
edited by J. Ruzyllo and R. E. Novak, ECS Proceedings, Vol. PV 94-7, Pennington, NJ, 00.
329-338, (1994).
196. “Properties of the Heteroepitaxial AlN/SiC Interface” M. C. Benjamin, C. Wang, R. S.
Kern, R. F. Davis, and R. J. Nemanich, Diamond, SiC and Nitride Wide Bandgap
Semiconductors, edited by Calvin H. Carter, Jr., Gennady Gildenblat, Shuji Nakamura and
Robert J. Nemanich (Mater. Res. Soc. Symp. Proc., 339, San Francisco, CA p. 81-88
(1994).
197. “Comparison of Surface Cleaning Processes for Diamond C(001),” Peter K. Baumann, T.P.
Humphreys, and R.J. Nemanich, Diamond SiC Nitride Wide Bandgap Semiconductors,
edited by Calvin H. Carter, Jr., Gennady Gildenblat, Shuji Nakamura and Robert J.
Nemanich (Mater. Res. Soc. Symp. Proc. 339, San Fransisco, CA, p. 69-74 (1994).
198. “Strain and Impurity Content of Synthetic Diamond Crystals,” T. L. McCormick, W. E.
Jackson, and R. J. Nemanich, Novel Forms of Carbon II, edited by C.L. Renschler, D.M.
Cox, J.J. Pouch, Y. Achiba (Mater. Res. Soc. Proc. Symp. 349, San Fransisco, CA, p. 445-
450 (1994).
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