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116. “Epitaxial Growth and Stability <strong>of</strong> C49 TiSi2 on Si (111),” H. Jeon, J.W. Honeycutt, C.A.<br />

Sukow, T.P. Humphreys, R.J. Nemanich, and G.A. Rozgonyi, Epitaxial Heterstructures,<br />

edited by D.W. Shaw, J.C. Bean, V.G. Keramidas, P.S. Peercy, (Mater. Res. Soc. Symp.<br />

Proc., 198, San Fransisco, CA, p. 595-600 (1990).<br />

117. “Heteroepitaxial CxSi1-x Metastable Alloys,” J.B. Posthill, R.A. Rudder, S.V. Hattangady,<br />

G.G. Fountain, T.P. Humphreys, R.J. Nemanich, N.R. Parikh, and R.J. Markunas, Epitaxial<br />

Heterostructures, edited by Don W. Shaw, John C. Bean, Vassilis G. Keramidas, and Paul<br />

S. Peercy, (Mater. Res. Soc. Symp. Proc., 198, San Fransisco, CA, p. 497-502 (1990).<br />

118. “Assesment <strong>of</strong> SixGe1-x Epitaxial Alloys Grown on Silicon at 350 degrees Celcius,” J.B.<br />

Posthill, D.P. Malta, S.V. Hattangady, N.R. Parikh, T.P. Humphreys, R.A. Rudder, G.G.<br />

Fountain, R.J. Nemanich, and R.J. Markunas. Proceedings <strong>of</strong> the XIIth International<br />

Congress for Electron Microscopy, Eds. L.D. Peachy and D.B. Williams, 4:646, (1990).<br />

119. “Photoluminescence Spectroscopy Measurement <strong>of</strong> Elastic Strain in Heteroepitaxial GaAs<br />

Films,” T.P. Humphreys, R.J. Nemanich, K. Das, N.R. Parikh, and J.B. Posthill, Electronic<br />

Letters 26, 835-837, (1990).<br />

120. “Electrical Properties <strong>of</strong> B Doped CVD Grown Polycrystalline Diamond Films,” K.<br />

Nishimura, K. Das, J.T. Glass, K. Kobashi and R.J. Nemanich in The <strong>Physics</strong> and<br />

Chemistry <strong>of</strong> Carbides; Nitrides and Borides, 183-194, (1990).<br />

121. “Titanium Silicide: Epitaxy, Morphology and Structure,” R.J. Nemanich, H. Jeon, J.W.<br />

Honeycutt, C.A. Sukow, and G.A. Rozgonyi. MCNC Microelectronics Technical Bulletin,<br />

2:6-9 (1990).<br />

122. “Vapor deposition <strong>of</strong> diamond thin films on various substrates,” Y.H. Lee, K.J. Bachmann,<br />

J.T. Glass, Y.M. LeGrice, and R.J. Nemanich. Appl. Phys. Lett. 57, 1916-1918, (1990).<br />

123. “Process and Surface Characterization <strong>of</strong> Hydrogen Plasma Cleaning <strong>of</strong> Si(100),” T.P.<br />

Schneider, J. Cho, J. van der Weide, S.E. Wells, G. Lucovsky, R.J. Nemanich, M.J.<br />

Mantini, R.A. Rudder, and R.J. Markunas, Chemical Perspectives <strong>of</strong> Microelectric<br />

Materials II, edited by I.V. Interrante, K.F. Jenson, L.H. Duboise, M.E. Gross, (Mater.<br />

Res. Soc. Symp. Proc., 204, Boston, Massachusetts, p. 333 (1990).<br />

1991<br />

124. “Electronic Structure, Surface Morphology and Epitaxy <strong>of</strong> Remote H-Plasma Cleaned<br />

Si(100),” T.P. Schneider, J. Cho, D.A. Aldrich, Y.L. Chen, D. Maher and R.J. Nemanich,<br />

Proceedings <strong>of</strong> the Second International Symposium on Cleaning Technology in<br />

Semiconductor Device Manufacturing <strong>of</strong> the Electrochemical Society, Eds. Jerzy Ruzyllo<br />

and Richard E. Novak, Vol. 92-12, pp 123-127, (1991).<br />

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