biographical summary of robert j. nemanich - Department of Physics ...

edited by F. Ponce, T. Moustakas, I. Akasaki, B. Monemar (Mater. Res. Soc. Symp. Proc.
449, Boston, MA, Fall 1996) p. 725-730.
247. “Nitride Based Thin Film Cold Cathode Emitters,” James A. Christman, Andrew T.
Sowers, Michael D. Bremser, Brandon L. Ward, Robert F. Davis and Robert J. Nemanich.
III-V Nitrides edited by F. Ponce, T. Moustakas, I. Akasaki, B. Monemar (Mater. Res. Soc.
Symp. Proc. 449, Boston, MA, Fall 1996) p. 1121-1126.
248. “Growth of Bulk ALN and GaN Single Crystals by Sublimation,” C. M. Balkas Z. Sitar T.
Zheleva, L. Bergman, I. K. Shmagin, J. F. Muth, R. Kolbas, R. Nemanich, and R. F. Davis.
III-V Nitrides edited by F. Ponce, T. Moustakas, I. Akasaki, B. Monemar (Mater. Res.
Soc. Symp. Proc. 449, Boston, MA, Fall p. 41-46 (1996).
249. “Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC(0001) Multilayer
Substrates Via Organometallic Vapor Phase Epitaxy,” O.H. Nam, M.D. Bremser, B.L.
Ward, R.J. Nemanich, R.F. Davis, III-V Nitrides edited by F. Ponce, T. Moustakas, I.
Akasaki, B. Monemar, (Mater. Res. Soc. Symp. Proc., Vol. 449, Boston, MA, Fall 1996)
p. 107-112, and Jpn.Journal of Appl. Phys., Vol. 36, No. 5A, p L532-L535 (1997).
250. “Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Tempatures Less
than 250°C,” E. Srinivasan, S. J. Ellis R. J. Nemanich and G. N. Parsons. (Mater. Res. Soc.
Symp Proc., Vol 452, Advances in Microcrystalline and Nanocrystalline Semiconductors,
p. 989-994 (1996).
251. “Hydrogen Evolution from Strained SixGe1-x(100)2x1:H Surfaces,” Ja-Hum Ku and R.J.
Nemanich. J. of Appl. Phys. 80, (8), 4715-4721 (1996).
252. “Cleaning of GaN Surfaces,” L.L. Smith, S.W. King, R.J. Nemanich, R.F. Davis. J.
Electronic Mater. 25, (5), 805-810 (1996).
253. “Removal of Fluorine and CFx Residue from Si (100) Surfaces by Remote RF Hydrogen
Plasma,” J. P. Barnak, H. Ying, S. King and R. J. Nemanich. Proceedings of the Third
International Symposium of Ultra Clean Processing of Silicon Surfaces, p. 251-255,
Antwerp, Belgium (1996).
254. “Surface electronic Structure of Clean and Hydrogen Chemisorbed SixGe1-x Alloy
Surfaces,” Ja-Hum Ku and R.J. Nemanich, Physical Review B54, 14102-14110 (1996).
255. “Phase Transformations during Microcutting Tests on Silicon,” B. V. Tanikella, A. H.
Somashekhar, A. T. Sowers, R. J. Nemanich and R. O. Scattergood, Appl. Phys. Lett. 69
(19), 2870-2872 (1996).
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