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biographical summary of robert j. nemanich - Department of Physics ...

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98. “Microstructural Defects and their Elimination in Heteroepitaxial GaAs on Silicon-on-<br />

Sapphire and Sapphire Substrates,” J.B. Posthill, N.R. Parikh, K. Das, T.P. Humphreys,<br />

R.J. Nemanich, and R.J. Markunas, Proc. 47th Annual Meeting <strong>of</strong> the Electron<br />

Microscopy Society <strong>of</strong> America, edited by G.W. Bailey, 588-589 (1989).<br />

99. “Low Pressure Deposition <strong>of</strong> Polycrystalline Diamond films using 1% CH4 in H2 rf<br />

Discharges,” R.A. Rudder, G.C. Hudson, M.J. Mantini, J.B. Posthill, R.C. Hendry, R.J.<br />

Markunas, Y.M. LeGrice, And R.J. Nemanich, Technology Update on Diamond Films,<br />

extended absract - 19, edited by R.P.H. Chang, D. Nelson, And A. Hiraki, (Mater. Res.<br />

Soc. Proc., p. 89 (1989).<br />

1990<br />

100. “Ultrafast recombinaton and trapping in amorphous Silicon,” A. Esser, K. Seibert, H. Kurz,<br />

G.N. Parsons, C. Wang, B. Davidson, G. Lucovsky, and R.J. Nemanich, Phys. Rev. B 41,<br />

2879-2884, (1990).<br />

101. “Surface Morphology <strong>of</strong> TiSi2 on Si, “ H. Jeon, and R.J. Nemanich, Proceedings <strong>of</strong> the<br />

3rd Int. Symposium on Si MBE and Thin Solid Films 184, 357-363, E. Kasper and E.H.C.<br />

Parker, editors, (1990).<br />

102. “Photoluminescence above the Tauc gap in a-Si:H,” I.H. Campbell, P.M. Fauchet, S.A.<br />

Lyon, and R.J. Nemanich, Phys. Rev. B 41, 9871-9879, (1990).<br />

103. “Analysis <strong>of</strong> the Composite Structures in Diamond Thin Films using Raman<br />

Spectroscopy,” R.E. Shroder, R.J. Nemanich, and J.T. Glass, Phys. Rev. B 41, 3738-3745,<br />

(1990).<br />

104. “X-Ray Absorption Studies <strong>of</strong> Titanium Silicide Formation at the Interface <strong>of</strong> Ti Deposited<br />

on Si,” D. Aldrich, Q. Islam, H. Jeon, R. Nemanich, and D.E. Sayers, Atomic Scale<br />

Structure <strong>of</strong> Interfaces, edited by R.D. Bringans, R.M. Feenstra, J.M. Gibson. (Mater.<br />

Res. Soc. Symp. Proc., 159, Boston, Massachusetts, p. 167 (1990).<br />

105. “Surface Morphologies and Interfaces <strong>of</strong> TiSi2 Formed From UHV Deposited Ti on Si,”<br />

H. Jeon, R.J. Nemanich, J.W. Honeycutt, and G.A. Rozgonyi, Layered Structures:<br />

Heterepitaxy, Superlattices, Strain, and Metastability, edited by B.W. Dodson, L.J.<br />

Schowalter, J.E. Cunningham, F.H. Pollak, (Mater. Res. Soc. Symp. Proc., 160, Boston,<br />

MA, p. 307-312 (1990).<br />

106. “Domain Size Determination in Diamond Thin Films,” Y.M. LeGrice, R.J. Nemanich, J.T.<br />

Glass, Y.H. Lee, R.A. Rudder, and R.J. Markunas, Diamond, Silicon carbide and Related<br />

Wide Bandgap Semiconductors, edited by J.T. Glass, R. Messier, N. Fujimori, (Mater.<br />

Res. Soc. Symp. Proc., 162, Boston, MA, p. 219-224 (1990).<br />

107. “Infared Characterization <strong>of</strong> the Hydrogen Environments in Diamond Thin Films,” Y.M.<br />

LeGrice, E.C. Buehler, R.J. Nemanich, J.T. Glass, K. Kabashi, F. Jansen, M.A. Machonkin<br />

22

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