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229. “Silicide Formation and Stability <strong>of</strong> TiSiGe and Co/SiGe,” Zhihai Wang, D.B. Aldrich,<br />

Y.L. Chen, D.E. Sayers, and R.J. Nemanich. Thin Solid Films 270, 555-560 (1995). (Also<br />

in the proceedings for the ICMCTF Conference in San Diego, CA, April (1995.)<br />

230. “Phase stabilities and surface morphologies <strong>of</strong> (Ti1-xZrx)Si2 thin films on Si(100),” Y. Dao,<br />

D.E. Sayers and R.J. Nemanich. J. Appl. Phys. 78, (11), 6584-6591 (1995).<br />

231 “(Negative) Electron Affinity <strong>of</strong> AlN and AlGaN Alloys,” R.J. Nemanich, M.C. Benjamin,<br />

S.W. King, M.D. Bremser, R.F. Davis, B. Chen, Z. Zhang, and J. Bernholc. Gallium<br />

Nitride and Related Materials, edited by F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A.<br />

Edmond. (Mater. Resl Soc. Symp. Proc. 395, Boston, MA, Fall pp 777-788 (1995).<br />

232. “XPS Measurement <strong>of</strong> the SiC/AlN Band-Offset at the (0001) Interface,” Sean King, M.C.<br />

Benjamin, R.J. Nemanich, R.F. Davis, and W.R.L. Lambrecht. Gallium Nitride and<br />

Related Materials, edited by F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond.<br />

(Mater. Res. Soc. Proc. 395, Boston, MA, Fall pp 375-380 (1995).<br />

233. “Ex situ and In situ Methods for Oxide and Carbon Removal from AlN and GaN<br />

Surfaces,” Sean W. King, Laura L. Smith, J.P. Barnak, Ja-Hum Ku, Jim A. Christman,<br />

Mark C. Benjamin, R.J. Nemanich and Robert F. Davis. Gallium Nitride and Related<br />

Materials, edited by F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond (Mater.<br />

Res. Soc. Symp. Proc. 395, Boston, MA, Fall, pp. 739-744 (1995).<br />

234. “Characterization <strong>of</strong> Zirconium Germanosiliciide formed by Solid State Reaction <strong>of</strong> Zr<br />

with Si1-xGex Alloys,” Z. Wang, D.B. Aldrich, P. Goeller, R.J. Nemanich and D.E. Sayers.<br />

Silicide Thin Films-Fabrication, Properties, and Applications, edited by Raymond T.<br />

Tung, Karen Maex, Paul W. Pellegrini, and Leslie H. Allen. (Mater. Res. Soc. Symp. Proc.<br />

402, Boston, MA p. 387-392 (1996).<br />

235. “Epitaxial Films <strong>of</strong> Cobalt Disilicide (100) Evaporated onto Si(100) from a Mixed Source,”<br />

P.T. Goeller, Z. Wang, D.E. Sayers, J.T. Glass and R.J. Nemanich. Silicide Thin Films-<br />

Fabrication, Properties, and Applicatioins, edited by Raymond T. Tung, Karen Maex, Paul<br />

W. Pellegrini and Leslie H. Allen, (Mater. Res Soc. Proc. Symp. 402, Boston, MA, Fall<br />

pp. 511-516 (1995).<br />

236. “Interface Stability <strong>of</strong> Ti(Si1-yGey)2 and Si1-xGex Alloys,” D.B. Aldrich, F.M. D'Huerle,<br />

D.E. Sayers and R.J. Nemanich. Silicide Thin Films-Fabrication, Properties, and<br />

Applicatioins, edited by Raymond T. Tung, Karen Maex, Paul W. Pellegrini and Leslie H.<br />

Allen, (Mater. Res Soc. Proc. Symp. 402, Boston, MA, Fall pp. 21-26 (1995).<br />

237. “Titanium Germanosilicide Phase Formation During the Ti-Si1-xGex Solid Phase<br />

Reactions,” D.B. Aldrich, D.E. Sayers and R.J. Nemanich, Silicide Thin Films-Fabrication,<br />

Properties, and Applicatioins, edited by Raymond T. Tung, Karen Maex, Paul W.<br />

Pellegrini and Leslie H. Allen, (Mater. Res Soc. Proc. Symp. 402, Boston, MA, Fall pp.<br />

405-410 (1995).<br />

36

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