biographical summary of robert j. nemanich - Department of Physics ...

Das, and S. Chevacharoenkul. Proceedings of ICACSC '91, Amorphous and Crystalline
Silicon Carbide IV - Recent Developments, edited by: C.Y. Young, M.M. Rahman, and
G.L. Harris, Springer Proc. in Physics, Vol. 71, 417-422 (1992).
152. “Growth and Characterization of Titanium Silicide Films on Natural Diamond C(001)
Substrates,” T.P. Humphreys, J.V. LaBrasca, K.F. Turner, R.J. Nemanich, K. Das, J.B.
Posthill, J.D. Hunn, and N.R. Parikh, Japanese J. Appl. Phys. 31, 2369-2373 (Part 1)
(1992).
153. “Morphology and Phase Stability of TiSi2 on Si,” H. Jeon, C. A. Sukow, J. W. Honeycutt,
G. A. Rozgonyi and R. J. Nemanich, Journal of Applied Physics 71, 4269-4276 (1992).
154. “Schottky Barrier Height and Negative Electron Affinity of Titanium on (111) Diamond,”
R. J. Nemanich and J. van der Weide, J. Vac. Sci. Technol. B 10, 1940-1943, (1992).
155. “Plasma-Surface Interaction Limits for Remote H-Plasma Cleaning of Si(100),” T. P.
Schneider, B. L. Bernhard, Y. L. Chen and R. J. Nemanich, Chemical Surface Preparation,
Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J.
Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff, (Mater. Res. Soc. Symp. Proc. 259,
213-218 (1992).
156. “Surface Electronic States of Low Temperature H-Plasma Cleaned Si(100) and Ge(100)
Surfaces,” J. Cho, T. P. Schneider and R. J. Nemanich, Chemical Surface Preparation,
Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J.
Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff (Mater. Res. Soc. Symp. Proc. 259,
237-242 (1992).
157. “Influence of Surface Pre-Cleaning on Electrical Properties of Rapid Thermal Oxide and
Rapid Thermal Chemical Vapor Deposition Oxide,” X. Xu, R. T. Kuehn, J. M. Melzak, G.
A. Hames, J. J. Wortman, M. C. Ozturk, R. J. Nemanich, G. Harris and D. Maher,
Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and
Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff (Mater. Res.
Soc. Symp. Proc. 259, p. 81-86 (1992).
158. “Nucleation and Morphology of TiSi2 on Si,” R. J. Nemanich, H. Jeon, C. A. Sukow, J. W.
Honeycutt and G. A. Rozgonyi. Advanced Metallization and Processing for
Semiconductor Devices and Circuits II, edited by A. Katz, S. P. Muraka, Y. J. Nissim, J.
M. E. Harper, (Mater. Res. Soc. Symp. Proc., 260, San Francisco, CA p.195-206 (1992).
159. “Comparison of the Interface and Surface Morphologies of Zirconium and Titanium
Silicides on Silicon,” C. A. Sukow and R. J. Nemanich. Advanced Metallization and
Processing for Semiconductor Devices and Circuits II, edited by A. Katz, S. P. Muraka, Y.
J. Nissim, J. M. E. Harper, (Mater. Res. Soc. Symp. Proc., 260: pp 251-256 (1992).
160. “Surface Electronic States of Low Temperature H-Plasma Exposed Ge(100),” J. Cho and
R. J. Nemanich. Physical Review B46, 12421-12426 (1992).
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