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Das, and S. Chevacharoenkul. Proceedings of ICACSC '91, Amorphous and Crystalline Silicon Carbide IV - Recent Developments, edited by: C.Y. Young, M.M. Rahman, and G.L. Harris, Springer Proc. in Physics, Vol. 71, 417-422 (1992). 152. “Growth and Characterization of Titanium Silicide Films on Natural Diamond C(001) Substrates,” T.P. Humphreys, J.V. LaBrasca, K.F. Turner, R.J. Nemanich, K. Das, J.B. Posthill, J.D. Hunn, and N.R. Parikh, Japanese J. Appl. Phys. 31, 2369-2373 (Part 1) (1992). 153. “Morphology and Phase Stability of TiSi2 on Si,” H. Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi and R. J. Nemanich, Journal of Applied Physics 71, 4269-4276 (1992). 154. “Schottky Barrier Height and Negative Electron Affinity of Titanium on (111) Diamond,” R. J. Nemanich and J. van der Weide, J. Vac. Sci. Technol. B 10, 1940-1943, (1992). 155. “Plasma-Surface Interaction Limits for Remote H-Plasma Cleaning of Si(100),” T. P. Schneider, B. L. Bernhard, Y. L. Chen and R. J. Nemanich, Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff, (Mater. Res. Soc. Symp. Proc. 259, 213-218 (1992). 156. “Surface Electronic States of Low Temperature H-Plasma Cleaned Si(100) and Ge(100) Surfaces,” J. Cho, T. P. Schneider and R. J. Nemanich, Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff (Mater. Res. Soc. Symp. Proc. 259, 237-242 (1992). 157. “Influence of Surface Pre-Cleaning on Electrical Properties of Rapid Thermal Oxide and Rapid Thermal Chemical Vapor Deposition Oxide,” X. Xu, R. T. Kuehn, J. M. Melzak, G. A. Hames, J. J. Wortman, M. C. Ozturk, R. J. Nemanich, G. Harris and D. Maher, Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, G. W. Rubloff (Mater. Res. Soc. Symp. Proc. 259, p. 81-86 (1992). 158. “Nucleation and Morphology of TiSi2 on Si,” R. J. Nemanich, H. Jeon, C. A. Sukow, J. W. Honeycutt and G. A. Rozgonyi. Advanced Metallization and Processing for Semiconductor Devices and Circuits II, edited by A. Katz, S. P. Muraka, Y. J. Nissim, J. M. E. Harper, (Mater. Res. Soc. Symp. Proc., 260, San Francisco, CA p.195-206 (1992). 159. “Comparison of the Interface and Surface Morphologies of Zirconium and Titanium Silicides on Silicon,” C. A. Sukow and R. J. Nemanich. Advanced Metallization and Processing for Semiconductor Devices and Circuits II, edited by A. Katz, S. P. Muraka, Y. J. Nissim, J. M. E. Harper, (Mater. Res. Soc. Symp. Proc., 260: pp 251-256 (1992). 160. “Surface Electronic States of Low Temperature H-Plasma Exposed Ge(100),” J. Cho and R. J. Nemanich. Physical Review B46, 12421-12426 (1992). 28
161. “Electrical Conductivity and Photoluminescence of Diamond Films Grown by Downstream Microwave Plasma CVD,” B. R. Stoner, J. T. Glass, L. Bergman, R. J. Nemanich, L. D. Zolton and J. W. Vandersande, Journal of Electronic Materials 21, 629-634, (1992). 162. “Interface Structure of Epitaxial TiSi2 on Si(111),” R. J. Nemanich, H. Jeon, J. W. Honeycutt, C. A. Sukow and G. A. Rozgonyi. Proc. of the 50th Ann. Meeting of the Electron Microscopy Society of America, Electron Microscopy, (Part 2), 1354-1355, (1992). 163. “Surface Electronic States and Stability of the H-terminated Si(100) 1x1 Surface Produced by Low temperature H-Plasma Exposure,” J. Cho and R. J. Nemanich. Physical Review B46, 15212-15217 (1992). 1993 164. “Properties of Interfaces of Diamond,” R. J. Nemanich, L. Bergman, K. F. Turner, J. van der Weide and T. P. Humphreys. Trieste Semiconductor Symposium on Wide-Band-Gap Semiconductors, Physica B 185, 528-538 (1993). 165. “EXAFS Study of the Initial Interface Region Formed by Thin Zirconium Films and Titanium Films on Silcon (111),” A. M. Edwards, Y. Dao, R. J. Nemanich and D. E. Sayers. Jpn. J. Appl. Phys. 32, Suppl. 32-2, pp 393-395 (1993). 166. “X-Ray Absorption Study of the Local Structure of Zr Thin Films on Silicon (111),” Y. Dao, A. M. Edwards, R. J. Nemanich and D. E. Sayers. Jpn. J. Appl. Phys. 32, Suppl. 32-2, pp 396-398 (1993). 167. “XAFS Study of Some Titanium Silicon and Germanium Compounds,” D. B. Aldrich, R. J. Nemanich, and D. E. Sayers. Jpn. J. of Appl. Phys. Proceedings from 7th International Conference on X-ray Absorption Fine Structure 32, Suppl. 32-2, pp 725-727 (1993). 168. “Micro-Photoluminescence and Raman Scattering Study of Defect Formation in Diamond Films,” L. Bergman, B. R. Stoner, K. F. Turner, J. T. Glass and R. J. Nemanich, J. Appl. Phys. 73, 3951-3957 (1993). 169. “Effect of surface hydrogen on metal-diamond interface properties,” T. Tachibana, J. T. Glass and R. J. Nemanich, J. Appl. Phys. 73, 834-842, (1993). 170. “Argon and Hydrogen Plasma Interactions on Diamond (111) Surfaces; Electronic States and Structure,” J. van der Weide and R. J. Nemanich, Appl. Phys. Lett. 62, 1878-1880 (1993). 171. “Investigation of Titanium Silicon and Germanium Reaction,” D. B. Aldrich, D. E. Sayers and R. J. Nemanich, Evolution of Surface and Thin Film Microstructure, edited by Harry 29
Page 1 and 2: BIOGRAPHICAL SUMMARY OF ROBERT J. N
Page 3 and 4: Leah Bergman, (PhD chair) Spring 19
Page 5 and 6: Brian Rodriguez (PhD chair) Oct. 20
Page 7 and 8: Jessica Hauser (REU Summer 1998) Pa
Page 9 and 10: 3. Policy and Professional Articles
Page 11 and 12: 8. “Surface Characterization,”
Page 13 and 14: 7. Publications 1975 1. “Coordina
Page 15 and 16: 22. “Structural Interpretation of
Page 17 and 18: 47. “Interfacial Reactions Betwee
Page 19 and 20: 70. “Thickness Dependence of the
Page 21 and 22: Electronic/Photonic Devices, edited
Page 23 and 24: and C.C. Tsai, Diamond, Silicon Car
Page 25 and 26: 125. “Acetylene Production in a D
Page 27: Nemanich, Amorphous Silicon Technol
Page 31 and 32: 181. “Titanium Germanosilicide: P
Page 33 and 34: 199. “Recombination Processes of
Page 35 and 36: 220. “Correlation of Roughness an
Page 37 and 38: 238. “Negative Electron Affinity
Page 39 and 40: 256. “Photoluminescence from mech
Page 41 and 42: Felter and Christopher Holland (Mat
Page 43 and 44: 295. “Characterization of Electro
Page 45 and 46: 317. “Germanium Segregation in th
Page 47 and 48: William Mackie, Dorota Temple and J
Page 49 and 50: 353. “Measurements of the Effecti
Page 51 and 52: 375. “Spatial and temperature dep
Page 53 and 54: 396. “Shape stability of TiSi2 is
Page 55 and 56: 418. “Oxidation Potentials of Hum
Page 57 and 58: 437. “Increased field-emission si
Page 59 and 60: 459. “Fabrication of metallic nan
Page 61 and 62: 15. "Characterization of Diamond Fi
Page 63 and 64: 42. “Remote Plasma and HF Vapor P
Page 65 and 66: 65. “Spatial and temperature depe
Page 67 and 68: 88. International Union of Material
Page 69 and 70: 21. “Raman Scattering for Semicon
Page 71 and 72: 11. Grants Awarded 1. “Complex Si
Page 73 and 74: 27. “Design of Prototype Chemical
Page 75: 53. “Carbon Nanostructures for En

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