biographical summary of robert j. nemanich - Department of Physics ...
biographical summary of robert j. nemanich - Department of Physics ...
biographical summary of robert j. nemanich - Department of Physics ...
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385. “Spatial inhomogeneity <strong>of</strong> imprint and switching behavior in ferroelectric capacitors”, A.<br />
Gruverman, B.J. Rodriguez, A.I. Kingon, R.J. Nemanich, J.S. Cross, M. Tsukada. Appl.<br />
Phys. Lett., 82 (18), 3071-3073 (2003).<br />
386. “Micro-Raman study <strong>of</strong> electronic properties <strong>of</strong> inversion domains in GaN-based lateral<br />
polarity heterostructures,” M. Park, J.J. Cuomo, B.J. Rodriguez, W. Yang, R.J. Nemanich,<br />
O. Ambacher. J. Appl Phys 93, (12), 9542-9547 (2003).<br />
387. “Mechanical stress effect on imprint behavior <strong>of</strong> integrated ferroelectric capacitors,” A.<br />
Gruverman, B.J. Rodriguez, A.I. Kingon, R.J. Nemanich, A.K. Tagantsev, J.S. Cross, and<br />
M. Tsukada, Appl. Phys. Lett. 83, (4), 728-730 (2003).<br />
388. “Band <strong>of</strong>fset measurements <strong>of</strong> the Si3N4/GaN (0001) interface,” T.E. Cook, Jr., C.C.<br />
Fulton, W.J. Mecouch, R.F. Davis, J. Appl. Phys. 94, (6), 3949-3954 (2003).<br />
389. “Preparation and Characterization <strong>of</strong> Atomically Clean, Stoichiometric Suraces <strong>of</strong> n- and<br />
p-type GaN(0001),” K.M. Tracy, W.J. Mecouch, R.F. Davis, J. Appl. Phys. 94, (5), 3163-<br />
3172 (2003).<br />
390. “Electrical and chemical characterization <strong>of</strong> the Schottky barrier formed between clean n-<br />
GaN(0001) surfaces and Pt, Au, and Ag,” K. M. Tracy, P. J. Hartlieb, S. Einfeldt, R. F.<br />
Davis, E. H. Hurt, R. J. Nemanich, J. Appl. Phys. 94, (6), 3939-3948 (2003).<br />
391. “Electronic structure <strong>of</strong> transition metal high-k dielectrics: interfacial band <strong>of</strong>fset energies<br />
for microelectronic devices,” G. Lucovsky, G.B. Rayner Jr., Yu Zhang, C.C. Fulton, R.J.<br />
Nemanich, G. Appel, H. Ade, J.L. Whitten, Appl. Surf. Sci. 212, 563-569 (2003).<br />
392. “High-pressure phase transformation <strong>of</strong> silicon nitride,” J. Patten, R. Fesperman, S. Kumar,<br />
S. McSpadden, J. Qu, M. Lance, R. Nemanich, J. Huening, Appl Phys Lett. 83, (23) 4740-<br />
4742 (2003).<br />
393. “Band <strong>of</strong>fset measurements <strong>of</strong> the GaN (0001)/HfO2 interface,” T.E. Cook, C.C. Fulton,<br />
W.J. Mecouch, R.F. Davis, G. Lucovsky, R.J. Nemanich, J Appl Phys. 94, (6), 3949-3954<br />
(2003).<br />
394. “Photoelectron emission microscopy observation <strong>of</strong> inversion domain boundaries <strong>of</strong> GaNbased<br />
lateral polarity heterostructures,” W.C. Yang, B.J. Rodriguez, M. Park, R.J.<br />
Nemanich, O. Ambacher, V. Cimalla, J Appl Phys. 94, (9), 5720-5725 (2003).<br />
2004<br />
395. “Three-dimensional high-resolution reconstruction <strong>of</strong> polarization in ferroelectric<br />
capacitors by piezoresponse force microscopy,” B.J. Rodriguez, A. Gruverman, A.I.<br />
Kingon, R.J. Nemanich, J.S. Cross, J Appl Phys. 95 (4): 1958-1962 (2004).<br />
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