Jens Janssen Diploma Thesis - Prof. Dr. Norbert Wermes ...

More documents

Recommendations

Info

from the expected charge of 10000 e ≠ . Especially for a small amount of charge,the empirical calibration function (equation 5.8) does not reflect the reality verywell (e. g. non-linearities of the DACs and amplifiers).After the ToT-to-charge conversion, the analysis of the clustered hit data isproceeded. The analysis includes the generation of hit maps, hit histograms,cluster size distributions and ToT distributions of di erent cluster sizes. Themost important aspect is the calculation of the most probable value (MPV). TheMPV is calculated by fitting a Landau distribution to the ToT distribution. Totake noise e ects (e.g. electronic noise) into account the Landau distribution isconvoluted with a Gaussian (“Langau”).64
Chapter 6Sensor Characterization6.1 IntroductionThe di erent sensor types used for laboratory characterization are listed intable 6.1. The first sensor (3631-303, hereinafter referred to as “ATLAS”) is ofn + -on-n-type and is used as a reference sensor. This sensor is taken from thesame batch of wafers that was previously used to assemble the ATLAS pixeldetector. Two other planar sensors (WR13 and W11) were fabricated by CiS 1 .Both sensors are of n + -on-p-type. All planar sensors are solder bump bonded tothe FE-I3 by IZM 2 . The W11 sensor is mistakenly mounted rotated by 180°. Twomore sensors (2EM6 and 4EM9) were contributed by FBK 3 . The sensors makeuse of 3D technology with n + -electrodes in p-bulk (2 and 4 electrodes per pixelcell, respectively), and are indium bump bonded to the FE-I3 pixel readout chipby SELEX 4 . They were irradiated with 25 MeV protons to a calculated fluenceof 1 ◊ 10 15 n eq /cm 2 at the Karlsruhe Irradiation Center 5 in April 2009. Only alimited amount of data is available that was taken before the irradiation so thatit could not be used for data analysis.Company/Institute Sensor Technology Type FE-I3 Thickness FluenceCiS 3631-303 “ATLAS” planar n + -on-n 5-7A 256 ± 10 µm unirradiatedCiS W11 19GR-2 planar n + -on-p 8-13B 300 ± 10 µm unirradiatedCiS WR13 19GR-NM2 planar n + -on-p 8-10A 300 ± 10 µm unirradiatedFBK 2EM6 3D, 2 electrodes n + -in-p n/a 200 ± 10 µm 1 ◊ 10 15 neq/cm 2FBK 4EM9 3D, 4 electrodes n + -in-p n/a 200 ± 10 µm 1 ◊ 10 15 neq/cm 2Table 6.1: Comparison between the di erent sensor types that were investigatedduring the laboratory characterization. All sensors types are, among types fromother companies, candidates for the ATLAS IBL pixel detector upgrade.1 Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14,D-99099 Erfurt, Germany.2 Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration, Gustav-Meyer-Allee 25,D-13355 Berlin, Germany.3 Fondazione Bruno Kessler, Via Santa Croce 77, I-38122 Trento, Italy.4 Sistemi Integrati S.p.A., Via Tiburtina 12, I-00131 Rome, Italy.5 Karlsruher Institut für Technologie, Institut für Experimentelle Kernphysik, CampusNord, PO Box 36 40, D-76021 Karlsruhe, Germany.65
Page 1:
Universität BonnPhysikalisches Ins
Page 7 and 8:
Chapter 1IntroductionThe ATLAS expe
Page 9 and 10:
Chapter 2The LHC Experiment2.1 The
Page 11 and 12:
Figure 2.3: Cut-away view of the in
Page 13 and 14:
The electromagnetic calorimeter use
Page 15 and 16:
Chapter 3Silicon Pixel Detectors3.1
Page 17 and 18: Figure 3.2: Layout and interconnect
Page 19 and 20: (a) (b)Figure 3.4: On top view of t
Page 21: Figure 3.5: The analog pixel block
Page 24 and 25: Figure 3.8: The digital block of th
Page 26 and 27: the digital readout of the chip can
Page 28 and 29: Stopping power [MeV cm 2 /g]100101L
Page 30 and 31: The free charge carriers need to be
Page 32 and 33: The first point particularly concer
Page 34 and 35: Figure 3.14: A 3D n-in-p sensor (le
Page 36 and 37: few µm compared to a few 100 µm).
Page 38 and 39: Figure 4.1: The USBpix test system
Page 40 and 41: e accessed through a 20-bit wide ad
Page 42 and 43: hardware, USBpixdll library uses fu
Page 44 and 45: 100Scan overlaythreshold80604020MSC
Page 46 and 47: mand clock (CCK, 4 MHz 17 ) by mult
Page 48 and 49: aw data word bit [31:0]hit wordw/o
Page 50 and 51: Figure 4.7: Overview of interconnec
Page 52 and 53: SOURCE_SCAN.Module "test"Cluster To
Page 54 and 55: Figure 5.1: The USBpix test setup:
Page 56 and 57: Not only the wafer processing a ect
Page 58 and 59: 2. The tuning was changed to a gain
Page 60 and 61: FDAC The FDAC is a 3-bit pixel regi
Page 62 and 63: probability of 50%. Mathematically,
Page 64 and 65: that the particles first impinge th
Page 66 and 67: 2. Conversion of (clustered) Time-o
Page 70 and 71: 6.2 Unirradiated Planar SensorsThe
Page 72 and 73: Sensor 3631-303 “ATLAS W11 19GR-2
Page 74 and 75: (a)(b)(c)Figure 6.4: Planar devices
Page 76 and 77: 6.3.1 Results of the Bias ScanLeaka
Page 78 and 79: (a)(b)Figure 6.7: Leakage current o
Page 80 and 81: (a)(b)Figure 6.9: FBK 3D devices: m
Page 82 and 83: Appendix AFE-I3 StandardConfigurati
Page 84 and 85: Appendix BFPGA ConfigurationRegiste
Page 86 and 87: Appendix CTuning ResultsThis page i
Page 88 and 89: Figure C.1: Tuning of the 3631-303
Page 90 and 91: 8642Figure C.3: Tuning of the WR13
Page 92 and 93: 8642Figure C.5: Tuning of the 4EM9
Page 94 and 95: [13] Peric, I. et al.: The FEI3 rea
Page 96 and 97: [37] Backhaus, M. et al.: Developme
show all

Jens Janssen Diploma Thesis - Prof. Dr. Norbert Wermes ...

Create successful ePaper yourself

Delete template?

Save as template?