4th EucheMs chemistry congress

thursday, 30-Aug 2012
s850
chem. Listy 106, s587–s1425 (2012)
solid state Chemistry Materials chemistry/New materials
solid state Chemistry and Nanochemistry
o - 5 1 9
MetAL-ASSiSted Growth of GerMAniuM
nAnowireS: oPPortunitieS uSinG SoLid MetAL
SeedS
S. BArth 1
1 Vienna University of Technology, Institute of Materials
Chemistry, Vienna, Austria
One-dimensional (1D) semiconductor nano-architectures
with tunable morphologies, dimensions, crystallographic phases
and orientation are of tremendous interest for a broad range of
applications. [1] Metal-seeded growth of 1D semiconductor
nanostructures is still a very active field of research, despite the
huge progress which has been made in understanding this
fundamental phenomenon. Liquid growth promoters allow control
of the aspect ratio, diameter and structure of 1D crystals via
external parameters, such as precursor feedstock, temperature and
operating pressure. However the transfer of crystallographic
information from a nanoparticle seed to a growing nanowire has
not been described in the literature. We investigated the formation
of Ge nanowires using solid metal growth promoters in a process
based on thermal decomposition of diphenylgermane. The
theoretical requirements for transferring information such as
defects from nanoparticle seeds to growing semiconductor
nanowires have been defined and we describe why specific metal
nanoparticles are ideal candidates for this purpose. [2] Significantly,
under certain reaction conditions {111} stacking faults in the
noble metal seeds can be directly transferred to a high percentage
of -oriented Ge nanowires, in the form of radial twins in
the semiconductor crystals. In addition, we will detail the
influence of solid growth seeds on the crystal quality of Ge
nanowires and demonstrate size-selective growth in the sub-20 nm
diameter regime. [3] Controlled defect transfer from nanoparticles
to nanowires could open up the possibility of engineering 1D
nanostructures with new and tuneable physical properties and
morphologies.
references:
1. S. Barth, F. Hernandez-Ramirez, J. D. Holmes,
A. Romano-Rodriguez. Prog. Mater. Sci. 2010, 55,
563–627.
2. S. Barth, J. J. Boland, J. D. Holmes. Nano Lett. 2011, 11,
1550-1555.
3. S. Barth, M. M. Kolesnik, K. Donegan, V. Krstic,
J. D. Holmes. Chem. Mater. 2011, 23, 3335–3340.
Keywords: Crystal growth; Chemical vapor deposition;
Nanostructures; Electron diffraction;
solid state Chemistry and Nanochemistry
4 th EucheMs chemistry congress
o - 5 2 0
StruCturAL ChArACterizAtion And
trAnSPort ProPertieS of Cvt Grown zrSe3
And zrS3 CryStALS.
A. dASAdiA 1 , B. nAriyA 1 , A. JAni 1
1 Sardar Patel University, Department Of Physics, Vallabh
Vidyanagar, India
Single crystals of ZrSe3 and ZrS3 are family of materials
with low symmetry structure were grown by chemical vapour
transport technique using iodine as a transporting agent. The
grown crystals were characterized by energy dispersive analysis
of X-ray (EDAX) for confirmation of stochiometric proportion of
constituent elements and structure of grown crystals was
determined by X-ray diffraction (XRD) technique. The resistivity
and thermoelectric power measurements were carried out in the
temperature range 308 K to 573 K. The Hall coefficient, carrier
concentration and Hall mobility were determined from Hall Effect
measurements at room temperature.
Keywords: Crystal Growth; CVT; structure characterization;
AUGUst 26–30, 2012, PrAGUE, cZEcH rEPUbLIc