10.07.2015 Views

X-ray Study of Low-mass Young Stellar Objects in the ρ Ophiuchi ...

X-ray Study of Low-mass Young Stellar Objects in the ρ Ophiuchi ...

X-ray Study of Low-mass Young Stellar Objects in the ρ Ophiuchi ...

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

4.3. ACIS – ADVANCED CCD IMAGING SPECTROMETER 27Quantum efficiency and effective areaFigure 4.8 shows <strong>the</strong> quantum efficiency <strong>of</strong> ACIS (left) and <strong>the</strong> comb<strong>in</strong>ed effective area <strong>of</strong> HRMAand ACIS (right). A large fraction <strong>of</strong> low energy X-<strong>ray</strong>s is absorbed at <strong>the</strong> optical block<strong>in</strong>g filter(OBF) and <strong>the</strong> gate structure for FI chips, hence <strong>the</strong> efficiency becomes worse at <strong>the</strong> lower energy.S<strong>in</strong>ce <strong>the</strong> gate <strong>of</strong> BI chips is at <strong>the</strong> opposite side to HRMA, <strong>the</strong> efficiency <strong>of</strong> BI chips at <strong>the</strong> lowenergy band is about two times better than that <strong>of</strong> FI chips. Due to <strong>the</strong> effect <strong>of</strong> CTI, <strong>the</strong> quantumefficiency at <strong>the</strong> fur<strong>the</strong>r side from <strong>the</strong> readout node is about 5–15 % worse than that near <strong>the</strong>node. The energy ranges with <strong>the</strong> effective area <strong>of</strong> larger than 10 cm 2 are ∼0.5–10.0 keV and∼0.1–10.0 keV for FI and BI chips, respectively.Fig. 4.8.— (left) The quantum efficiency <strong>of</strong> ACIS with <strong>the</strong> transmission <strong>of</strong> OBF. (right) Thecomb<strong>in</strong>ed effective area <strong>of</strong> HRMA and ACIS. The sudden drop-<strong>of</strong>f seen around 1.8 keV is due to<strong>the</strong> K-edge <strong>of</strong> silicon.Event gradeX-<strong>ray</strong> events are selected with <strong>the</strong> criterion that <strong>the</strong> bias-subtracted pixel value exceeds <strong>the</strong> eventthreshold (38 ADU ∼ = 140 eV and 20 ADU ∼ = 70 eV for FI and BI chips) and is <strong>the</strong> highestamong <strong>the</strong> neighbor<strong>in</strong>g 9×9 pixels. In order to dist<strong>in</strong>guish real events from background ones and toestimate <strong>the</strong> total number <strong>of</strong> electrons <strong>in</strong>clud<strong>in</strong>g those leak <strong>in</strong>to <strong>the</strong> neighbor<strong>in</strong>g pixels, <strong>the</strong> grademethod is used. Its algorithm is basically <strong>the</strong> same as <strong>the</strong> ASCA/SIS grade method (Burke et al.,1991), but ACIS gives <strong>the</strong> specified numbers for each pixel around <strong>the</strong> event pixel (Figure 4.9) anddeterm<strong>in</strong>es <strong>the</strong> grade by summ<strong>in</strong>g up those pixel numbers that have a pixel value larger than <strong>the</strong>

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!