MPhil thesis of Lo Chi Wa - Department of Electronic & Computer ...

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Chapter 7 MeasurementIntroductionThe frequency synthesizer is fabricated by a HP 0.5-µm single-poly-triple-metal N-wellCMOS technology with N-well poly linear capacitor and silicide-blocked resistoroptions. The measurements include the passive components which dominate theperformance of the frequency synthesizer, the voltage-controlled oscillator which is themost important building block in the frequency synthesizer, and the frequencysynthesizer itself.Passive componentsIn the voltage-controlled oscillator, there are many on-chip passive componentsincluding spiral inductors, switchable-capacitor arrays and varactors. The parameters ofthese passive components, including the extra value, the parasitics, tuning range andquality factor, determine the performance of the voltage-controlled oscillator, e.g. thephase noise performance, the center frequency, the tuning range, the amplitude and thepower consumption. Unfortunately, the parameters of these components depend heavilyon the process. Due the process variation and some conceal parameters of the process,the modeling of the passive components is not very accurate. Therefore, measurementson the passive components are necessary to verify the modeling and the performance ofthe frequency synthesizer.102
Testing setupThe testing setup shown in Fig. 99 is used to measure the one-port S-parameter of theinductor, the switchable-capacitor array and the varactor. The measured one-port S-parameters are converted to Z-parameters to show the different parameters of thecomponents including resistance, inductance or capacitance. All the passivecomponents under test are connected to the pads as shown in the top of Fig. 99. Thecenter-to-center distance between the pads is 150µm and the size of each pad is 75µm x75µm. The two grounded pads of metal 3 are connected together and connected to theohmic contacts on the substrate through metal 2 and metal 1. A calibrated high-speedGSG probe connected to a network analyzer is used to probe the components and thenetwork analyzer will show the one-port S-parameter of the measured components. ADC power supply is connected to the network analyzer to bias the components for themeasurements of the components under different bias conditions.GSGHP 8150Cnetwork analyzerDC supplyFig. 99 Testing setup for the passive component measurement103
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A 1.5-V 900-Mhz Monolithic CMOSFast
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A 1.5-V 900-Mhz Monolithic CMOS Fas
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Table of ContentsPageAcknowledgment
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Testing setup......................
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List of FiguresPageFig. 1 Block dia
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Fig. 76 Amplitudes and currents of
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Chapter 1 IntroductionBackgroundWir
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applications because it can provide
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existing monolithic frequency synth
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the receiver frequency band is from
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out-of-bandin-bandout-of-band0dBmin
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Based on the maximum interference,
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carrierdBcspur∆fFig. 8 Frequency
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Spurs requirement (dBc)Frequency of
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The frequency diversity can be perf
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Chapter 3 System DesignPhase-locked
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coarse tuning can be provided by th
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array is now possible. Moreover, th
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performance of the synthesizer 9 .
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signalquantizationnoisea) f b)signa
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esolution. The loop bandwidth is 80
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the output value between 0 and 0.5,
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The coupled-LC oscillators can be v
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890MHzf25MHz243KHz865MHzFig. 23 Tun
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onoffCwellClinearCwellClinearCwellC
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spirals of similar sizes is around
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in Fig. 27a and Fig. 27b, the same
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conductance (Gm) and the reciprocal
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−19⎛ 900M⎞0.0259×1.6×10 ×
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GdoVinFig. 32 Gdo of the proposed L
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RzCzIcpCpR4C4a)IcpCzR4B.IcpCpRpC4b)
Page 63 and 64: Usually, capacitors in the filter o
Page 65 and 66: RVinFig. 38 Resistance of NMOS resi
Page 67 and 68: feedback path to prevent the proble
Page 69 and 70: 890MHz25MHz865MHzfA+∆A
Page 71 and 72: High-speed multi-modulus dividerThe
Page 73 and 74: CLKQBQDDBFig. 50 Schematic diagram
Page 75 and 76: ANDgateABclkclkclkclkQBFig. 54 Sche
Page 77 and 78: f o/2 /2,3 /2,3 /2 /2f div/4Combina
Page 79 and 80: next stage, as shown in the Fig. 59
Page 81 and 82: co10bDclkclkFig. 60 Schematic of th
Page 83 and 84: (1-Z -1 ) 23bDQBclkZ -1 (1-Z -1 )2b
Page 85 and 86: X 16clkDclkQBDclkQBFig. 66 Schemati
Page 87 and 88: ~90 oa) b) c)Fig. 68 Different meth
Page 89 and 90: (dotted line). As the oscillation c
Page 91 and 92: In practice, it is not desirable to
Page 93 and 94: and decrease in amplitude mismatch
Page 95 and 96: Current interactionThe two oscillat
Page 97 and 98: equirements. Fortunately, by connec
Page 99 and 100: LC oscillators are put apart to red
Page 101 and 102: Gain mismatch (in %)Two oscillators
Page 103 and 104: equals to1 . By doubling the height
Page 105 and 106: 30 is obtained. It is because the s
Page 107 and 108: The spiral inductor is designed and
Page 109 and 110: oscillators (shown in the upper and
Page 111 and 112: Synthesizer LayoutThe layout and th
Page 113: Die LayoutFig. 98 shows the die pho
Page 117 and 118: Resistance (ohms)Freq (Hz)Fig. 101
Page 119 and 120: Resistance (ohms)Freq (Hz)Fig. 105
Page 121 and 122: VaractorFig. 109 shows the testing
Page 123 and 124: Table 5 Summary of parameters of va
Page 125 and 126: Table 6 Summary of N-well substrate
Page 127 and 128: Fig. 120 Quality factor of the swit
Page 129 and 130: The decrease in quality factor is d
Page 131 and 132: Fig. 126 Schematic diagram of the p
Page 133 and 134: Output frequency(MHz)Number of swit
Page 135 and 136: Gain (MHz/V)Tuning voltage (v)Fig.
Page 137 and 138: on the process variation. Therefore
Page 139 and 140: voltage (Vos = Rp x Ios) appeared.
Page 141 and 142: Although the spurs are quite large,
Page 143 and 144: GMSK signals with 0.3 BT and a bit
Page 145 and 146: Power spectral density (dB)(b)(a)(c
Page 147 and 148: Summary of performanceA summary of
Page 149 and 150: Table 10 Comparison of performances
Page 151 and 152: As the voltage-controlled oscillato
Page 153 and 154: Bibliography1 Thomas H. Lee, The De
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