MPhil thesis of Lo Chi Wa - Department of Electronic & Computer ...

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The high-speed divide-by-2 divider is driven by the voltage-controlled oscillator output.Since the input DC level of the divider and the output DC level of the voltagecontrolledoscillator are not matched, the input of the divider is AC-coupled from theoutput of the voltage-controlled oscillator and biased by external voltage reference bythe circuit in Fig. 48. The circuit includes two linear capacitors and two NMOStransistors in linear region as large resistors.in+out+out-biasin-Fig. 48 AC couple and biasing for the input of the prescalarThe divider is a loop of two D-type latches clocked by a pair of complementary clocks,as shown in Fig. 49. The high-speed D-type latches have full swing output and canprovide a robust performance. Except the clock inputs, all the transistors in the latch areNMOS without any stacking, as shown in Fig. 50 to increase the speed of operation.Once the clock input is low, the latch will store the input value.D QBDB QclkD QBDB QclkFig. 49 Schematic diagram of the high speed divide-by-2 divider60
CLKQBQDDBFig. 50 Schematic diagram of the high speed D latchPhase select circuitThe phase select is done by AND-OR gate array, as shown in Fig. 51. The invertedoutput from the divider will apply to the OR gate with its select signal. If the selectsignal is low, the phase is selected and passed to the output through the wired ANDgate. For high-speed operation, all logic gates are pseudo-NMOS design. In Fig. 52, a)the pseudo-NMOS inverter a) inverts the input and pass the output to b) the pseudo-NMOS OR gate and all the outputs of the OR gate will be connected to a common pullhighNMOS to form c) a wired-AND gate.0 o90 ooutput180 owired and270 oFig. 51 Schematic of the phase select circuit61
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A 1.5-V 900-Mhz Monolithic CMOSFast
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A 1.5-V 900-Mhz Monolithic CMOS Fas
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Table of ContentsPageAcknowledgment
Page 7 and 8:
Testing setup......................
Page 9 and 10:
List of FiguresPageFig. 1 Block dia
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Fig. 76 Amplitudes and currents of
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Chapter 1 IntroductionBackgroundWir
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applications because it can provide
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existing monolithic frequency synth
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the receiver frequency band is from
Page 21 and 22: out-of-bandin-bandout-of-band0dBmin
Page 23 and 24: Based on the maximum interference,
Page 25 and 26: carrierdBcspur∆fFig. 8 Frequency
Page 27 and 28: Spurs requirement (dBc)Frequency of
Page 29 and 30: The frequency diversity can be perf
Page 31 and 32: Chapter 3 System DesignPhase-locked
Page 33 and 34: coarse tuning can be provided by th
Page 35 and 36: array is now possible. Moreover, th
Page 37 and 38: performance of the synthesizer 9 .
Page 39 and 40: signalquantizationnoisea) f b)signa
Page 41 and 42: esolution. The loop bandwidth is 80
Page 43 and 44: the output value between 0 and 0.5,
Page 45 and 46: The coupled-LC oscillators can be v
Page 47 and 48: 890MHzf25MHz243KHz865MHzFig. 23 Tun
Page 49 and 50: onoffCwellClinearCwellClinearCwellC
Page 51 and 52: spirals of similar sizes is around
Page 53 and 54: in Fig. 27a and Fig. 27b, the same
Page 55 and 56: conductance (Gm) and the reciprocal
Page 57 and 58: −19⎛ 900M⎞0.0259×1.6×10 ×
Page 59 and 60: GdoVinFig. 32 Gdo of the proposed L
Page 61 and 62: RzCzIcpCpR4C4a)IcpCzR4B.IcpCpRpC4b)
Page 63 and 64: Usually, capacitors in the filter o
Page 65 and 66: RVinFig. 38 Resistance of NMOS resi
Page 67 and 68: feedback path to prevent the proble
Page 69 and 70: 890MHz25MHz865MHzfA+∆A
Page 71: High-speed multi-modulus dividerThe
Page 75 and 76: ANDgateABclkclkclkclkQBFig. 54 Sche
Page 77 and 78: f o/2 /2,3 /2,3 /2 /2f div/4Combina
Page 79 and 80: next stage, as shown in the Fig. 59
Page 81 and 82: co10bDclkclkFig. 60 Schematic of th
Page 83 and 84: (1-Z -1 ) 23bDQBclkZ -1 (1-Z -1 )2b
Page 85 and 86: X 16clkDclkQBDclkQBFig. 66 Schemati
Page 87 and 88: ~90 oa) b) c)Fig. 68 Different meth
Page 89 and 90: (dotted line). As the oscillation c
Page 91 and 92: In practice, it is not desirable to
Page 93 and 94: and decrease in amplitude mismatch
Page 95 and 96: Current interactionThe two oscillat
Page 97 and 98: equirements. Fortunately, by connec
Page 99 and 100: LC oscillators are put apart to red
Page 101 and 102: Gain mismatch (in %)Two oscillators
Page 103 and 104: equals to1 . By doubling the height
Page 105 and 106: 30 is obtained. It is because the s
Page 107 and 108: The spiral inductor is designed and
Page 109 and 110: oscillators (shown in the upper and
Page 111 and 112: Synthesizer LayoutThe layout and th
Page 113 and 114: Die LayoutFig. 98 shows the die pho
Page 115 and 116: Testing setupThe testing setup show
Page 117 and 118: Resistance (ohms)Freq (Hz)Fig. 101
Page 119 and 120: Resistance (ohms)Freq (Hz)Fig. 105
Page 121 and 122: VaractorFig. 109 shows the testing
Page 123 and 124:
Table 5 Summary of parameters of va
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Table 6 Summary of N-well substrate
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Fig. 120 Quality factor of the swit
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The decrease in quality factor is d
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Fig. 126 Schematic diagram of the p
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Output frequency(MHz)Number of swit
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Gain (MHz/V)Tuning voltage (v)Fig.
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on the process variation. Therefore
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voltage (Vos = Rp x Ios) appeared.
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Although the spurs are quite large,
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GMSK signals with 0.3 BT and a bit
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Power spectral density (dB)(b)(a)(c
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Summary of performanceA summary of
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Table 10 Comparison of performances
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As the voltage-controlled oscillato
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Bibliography1 Thomas H. Lee, The De
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MPhil thesis of Lo Chi Wa - Department of Electronic & Computer ...

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