Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
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87<br />
(a) (b)<br />
Fig. 7.15. The (a) experimental (b) simulated SAD pattern <strong>of</strong> <strong>the</strong> [110] zone axis <strong>in</strong><br />
<strong>the</strong> <strong>3C</strong>-<strong>SiC</strong> sample annealed at 1600°C for 1 hr<br />
To expla<strong>in</strong> <strong>the</strong> results obta<strong>in</strong>ed for <strong>the</strong> implanted <strong>SiC</strong> <strong>the</strong> follow<strong>in</strong>g is proposed.<br />
Dur<strong>in</strong>g proton implantation po<strong>in</strong>t <strong>defects</strong> (<strong>in</strong>terstitial atoms, vacancies and hydrogen<br />
atoms) are generated simultaneously <strong>in</strong> <strong>the</strong> specimen. In <strong>the</strong> case <strong>of</strong> <strong>SiC</strong> <strong>the</strong> <strong>in</strong>terstitial<br />
atoms and vacancies are from both sublattices, i.e. silicon and carbon. S<strong>in</strong>ce<br />
<strong>in</strong>terstitials and vacancies can have a charge, <strong>the</strong>y can trap electrons or holes. Po<strong>in</strong>t<br />
<strong>defects</strong> produced by irradiation can be trapped by a number <strong>of</strong> s<strong>in</strong>ks <strong>of</strong> which <strong>the</strong><br />
follow<strong>in</strong>g are <strong>the</strong> most important:<br />
1. Interstitial and vacancy recomb<strong>in</strong>ation will result <strong>in</strong> mutual annihilation.<br />
2. Some vacancies may trap hydrogen atoms lead<strong>in</strong>g to <strong>the</strong> formation <strong>of</strong> gas filled<br />
bubbles or two dimensional platelets.<br />
3. Interstitials and vacancies can be trapped by dislocations, dislocation loops and<br />
voids.<br />
In order for <strong>the</strong> displaced atoms and hydrogen to <strong>in</strong>teract dur<strong>in</strong>g post irradiation<br />
anneal<strong>in</strong>g, <strong>the</strong>y must be mobile enough to migrate to <strong>the</strong> various s<strong>in</strong>ks.<br />
S<strong>in</strong>ce dislocation loops on {111} and {110} planes consist <strong>of</strong> double layers <strong>of</strong> silicon<br />
and carbon atoms charge neutrality is ma<strong>in</strong>ta<strong>in</strong>ed. This is a result <strong>of</strong> <strong>the</strong> Coulomb<br />
repulsion <strong>in</strong> dielectric ionic materials which ensures that <strong>in</strong>terstitial coalescence <strong>in</strong>to a<br />
dislocation loop rema<strong>in</strong>s stoichiometric (Ryazanov et al. 2002). The same argument<br />
would apply to vacancy loops.