Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...

4.2.5. Two-Beam Scattering Matrix 44
4.2.6. Crystal Defects and Displacement Fields 45
4.3. Image Contrast for Selected Defects 47
4.3.1. Line Defects 47
4.3.2. Stacking Faults 47
4.3.3. Fringe Contrast Observed from Twinning 51
Chapter 5: LITERATURE REVIEW OF SiC 53
5.1. Introduction 53
5.2. CVD Growth of β-SiC on Si 53
5.3. Crystal Defects in β-SiC 56
5.3.1. Introduction 56
5.3.2. Accommodation of Misfit and Interfacial Twinning 57
5.3.3. Mechanisms for the Formation of Stacking Faults 58
5.3.4. Stacking Fault Energy in β-SiC 61
5.4. Ion Implantation and Radiation Damage in β-SiC 61
Chapter 6: EXPERIMENTAL DETAILS 64
6.1. Introduction 64
6.2. CVD Growth of β-SiC 64
6.3. Proton Implantation in β-SiC 64
6.3.1. Ion Ranges and Defect Production 65
6.4. Annealing Procedure 67
6.5. Sample Preparation 68
Chapter 7: RESULTS AND DISCUSSION 69
7.1. Introduction 69
7.2. Extended Defects in β-SiC Grown by CVD on (001) Si 69
7.2.1. Crystal Structure and the SiC/Si Interface 70
7.2.2. Stacking Faults and Partial Dislocations 74
7.2.3. Twinning 82
7.3. Hydrogen Implanted β-SiC 83
7.3.1. Unannealed 83
7.3.2. Annealed at 1300°C 84
7.3.3. Annealed at 1600°C 85
7.4. Reassessment of Unimplanted Sample 94
7.4.1. Overview of Investigation 94
7.4.2. Results 95
Chapter 8: CONCLUSION 96
8.1. Introduction 96
8.2. TEM Analysis of β-SiC Grown on (001) Si by CVD 96
8.3. TEM Analysis of β-SiC Proton Bombarded and Annealed 97
β-SiC
References 99