Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...

(a) (b)
6
Fig. 2.4. Stacking sequences of the zinc-blende structure for the (a) {100} and (b)
{111} planes
A
A'
B
B'
A
A'
B
B'
A
A'
B
B'
The two consecutive layers of the constituent atoms in the same type of configuration
are considered as a single plane consisting of a double layer of Si and C atoms. Thus a
ABABAB… or ABCABC… stacking sequence as in the case for the fcc structure
results with the only difference being that a layer contains both the constituent atoms.
-SiC is a cubic phase of SiC with a zinc-blende structure as shown in Fig. 2.3. The
{110} planes consist of double layers of Si and C atoms. Also the stacking sequence
for the {100} and {110} planes are AA'BB'AA'… and AA'BB'CC' for the {111}
planes (where the ' denotes the stacking sequence of the alternate set of atoms). Note
also that the consecutive layers of the silicon and carbon atoms in the sequence for
e.g., AA' is closely spaced and thus the stacking sequence can be generalized to be
ABABAB… and ABCABC… in the {100}, {110} and {111} case respectively by
combining the two closely spaced layers to form one plane.
A
B
A
B
A
B
A
A'
B
B'
C
C'
A
A'
B
B'
C
C'
A
B
C
A
B
C