Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
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'<br />
with ξg <strong>the</strong> ext<strong>in</strong>ction distance, g <strong>the</strong> absorption length and g g <br />
g<br />
'<br />
.<br />
The ext<strong>in</strong>ction distance and absorption length is given by <strong>the</strong> follow<strong>in</strong>g,<br />
1 U g<br />
<br />
k g cos<br />
g<br />
'<br />
1 U g<br />
'<br />
k g cos<br />
g<br />
42<br />
The ext<strong>in</strong>ction distances as calculated by Electron Diffraction (2003) is given <strong>in</strong> Table<br />
4.1. for commonly used reflections for <strong>3C</strong>-<strong>SiC</strong>.<br />
Table 4.1. – The ext<strong>in</strong>ction distances <strong>in</strong> <strong>3C</strong>-<strong>SiC</strong> at 200 kV as calculated by Electron<br />
Diffraction (2003).<br />
4.2.4 DHW Equations: Two Beam Case<br />
Index ξg (<strong>in</strong> Å)<br />
111 622<br />
220 825<br />
200 1915<br />
400 1383<br />
113 1431<br />
When <strong>the</strong> special case <strong>in</strong> which <strong>the</strong> <strong>in</strong>tensity <strong>of</strong> <strong>the</strong> <strong>in</strong>cident beam is shared only<br />
between <strong>the</strong> transmitted ψ0 and one diffracted beam ψg is considered, <strong>the</strong> DHW<br />
equations are given by two coupled differential equations. They are,