Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...

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Foti, G. : (2001) App. Surf. Sci. 184 20. 100 Gao, F., Devanathan, R., Zhang, Y., Posselt, M. and Weber, W.J. : (2006) J. Mater. Res., 21, 1420. Gao, F., Weber, W.J. and Devanathan, R. : (2001) Nuclear Instruments and Methods in Physics Research B, 180, 176. Girifalco, L.A. : (1964) “Atomic Migration in Crystals”, New York, Blaisdell. Gulden, T.D. : (1971) J. American Ceramic Soc., 54, 498. Hasegawa, A., Saito, M., Nogami, S., Abe, K., Jones, R.H. and Takahashi, H. : (1999) J. Nucl. Mat., 264, 355. Head, A.K., Humble, P., Clarebrough, L.M., Morton, A.J. and Forwood, C.T. : (1973) Computed Electron Micrographs and Defect Identification, volume 7 of Defects in Crystalline Solids, S. Amelinckx, R. Gevers, and J. Nihoul, editors. North-Holland, Amsterdam. Heinisch, H.L., Greenwood, L.R., Weber, W.J. and Williford, R.E. : (2004) J. Nucl. Mat., 327, 175. Heissenstein, H., Peppermueller, C. and Helbig, R. : (1998) J. App. Phys., 83, 7542. Hirsch, P.B., Howie, A., Nicholson, R.B., Whelan, M.J. and Pashley, D.W. : (1965) “Electron Microscopy of Thin Crystals”, Butterworths, London. Ho, W., Long, C. and Ustin, S.A. : (1999) J. App. Sci., 86, 2509. Hon, M.H. and Davis, R.F. : (1979) J. Mat. Sci., 14, 2411.
101 Hull, D., Bacon, D.J. : (1984) “Introduction to Dislocations”, 3 rd Edition, Volume 37, Butterworth Heinemann. Iwata, H.P., Lindefelt, U., Öberg, S. and Briddon, P.R. : (2003) Physica B, 340-342, 165. Iwata, H., Lindefelt, U., Öberg, S. and Briddon, P.R. : (2002) Mat. Sci. For., 389-393, 439. Jacob, C., Teker, K., Chung, J. and Hong, M.H. : (2000) Thin Solid Films, 371, 53. JEMS – Electron Microscopy Software, Java version 3.1214W2006, PA Stadelmann, CIME-EPFL, Laussane, Switzerland Käckell, P., Furthmüller, J. and Bechstedt, F. : (1998) Phys. Rev. B, 58, 1326. Karch, K., Wellenhofer, G., Pavone, P., Rössler, U. and Strauch, D. : (1994) Proc. 22 nd Int. Conf. on Phys. Semic., ed. D. Lockwood, 401. Kelly, B.T. : (1966) “Irradiation damage to solids”, Pergamon Press Ltd. Kinchin, G.H. and Pease, R.S. : (1955) Reports on Progress in Physics, 18, 1. Lebedev, O.I., Van Tendeloo, G., Suvorova, A.A., Usov, I.O. and Suvorov, A.V. : (1997) J. Elec. Micr., 46(4), 271. Lee, S.J. and Vicens, J. : (1992) Mat. Sci. Eng., B11, 325. Lindefelt, U., Iwata, H., Öberg, S. and Briddon, P.R. : (2003) Phys. Rev. B, 67, 155204. Malerba, L., Perlado, J.M., Sánchez-Rubio, A., Pastor, I., Colombo, L. and Diaz de la Rubia, T. : (2000) J. Nucl. Mat., 283-287, 794.
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Analysis of the Extended Defects in
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My sincere thanks to the following
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OPSOMMING Hierdie dissertasie hande
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4.2.5. Two-Beam Scattering Matrix 4
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Dedicated to my wife and parents
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SUMMARY The dissertation focuses on
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CONTENTS Chapter 1: INTRODUCTION 1
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1 CHAPTER ONE INTRODUCTION Silicon
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2.1. Introduction 3 CHAPTER TWO OVE
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2.2.2 The Zinc-Blende Structure 5 T
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2.3 Point Defects, Defect Migration
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v m Em vm0 exp( ) (2.2) kT 9 wher
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11 explained and the concept of par
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13 Straight dislocations furthermor
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2.5 Partial Dislocations and Slip 1
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17 Fig. 2.13. The geometrical setup
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19 extrinsic stacking faults are th
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2.8 Twinning 21 Twinning is a proce
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23 Fig. 2.20. The process of vacanc
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S n Td (3.2) 25 and is also referr
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27 where a = a0(Z1 2/3 + Z2 2/3 ) -
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29 Using this expression, curves of
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31 As stated previously hard-sphere
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33 where A is the atomic weight. Th
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35 a vacancy dislocation loop if th
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37 Fig. 4.1. (a) A wave incident on
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39 Consider Fig. 4.2 which illustra
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41 V0 is the mean inner potential o
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43 beam left-hand side g' = 0 g' =
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45 In addition another set of indep
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47 When this is incorporated into t
Page 63 and 64: S ( s , z ) e T i Se ( / 0 )
Page 65 and 66: z0 z2 . xn cos and (4.47) D 1 proj
Page 67 and 68: 5.1 Introduction 53 CHAPTER FIVE LI
Page 69 and 70: 55 different orientations. The inte
Page 71 and 72: 57 Furthermore Pirouz et al. (1987)
Page 73 and 74: 59 intersection of the fault, the f
Page 75 and 76: 61 each nuclei because of the low s
Page 77 and 78: 63 (2000) found that subsequent ann
Page 79 and 80: 6.3.1 Ion Range and Defect Producti
Page 81 and 82: 67 Fig. 6.3. Total number of displa
Page 83 and 84: 7.1 Introduction 69 CHAPTER SEVEN R
Page 85 and 86: Fig. 7.2. Simulated diffraction pat
Page 87 and 88: 73 Fig. 7.3. A HRTEM image of the S
Page 89 and 90: 75 Fig. 7.5. The stacking fault sel
Page 91 and 92: (Si/ni) 2 0.000018 0.000016 0.00001
Page 93 and 94: 79 may be concluded that the initia
Page 95 and 96: 81 Fig. 7.11. Bright field TEM micr
Page 97 and 98: 83 Fig. 7.12 which was obtained by
Page 99 and 100: 85 Fig. 7.13. Bright-field TEM micr
Page 101 and 102: 87 (a) (b) Fig. 7.15. The (a) exper
Page 103 and 104: 89 In the following paragraphs the
Page 105 and 106: Fig. 7.18. CBED pattern taken of th
Page 107 and 108: 93 Table 7.5. The measured paramete
Page 109 and 110: 7.4.2 Results 95 Fig. 7.22. Bright-
Page 111 and 112: 97 Twin platelets on {111} planes
Page 113: 99 REFERENCES Blumenau, A.T., Jones
Page 117: 103 Smith, D.J., Jepps, N.W. and Pa
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