Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
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79<br />
may be concluded that <strong>the</strong> <strong>in</strong>itial identification <strong>of</strong> <strong>the</strong> fault was correct. Also <strong>the</strong><br />
fr<strong>in</strong>ges <strong>in</strong> <strong>the</strong> bright and dark-field images are complementary and symmetrical <strong>in</strong><br />
both cases. This be<strong>in</strong>g a direct result <strong>of</strong> <strong>the</strong> magnitude <strong>of</strong> <strong>the</strong> anomalous absorption<br />
ratio for <strong>SiC</strong> which differs from that <strong>of</strong> heavier elements. The complementary and<br />
symmetrical nature <strong>of</strong> bright and dark-field SF images <strong>of</strong> <strong>SiC</strong> is not true <strong>in</strong> general for<br />
<strong>the</strong> heavier elements (Hirsch et al. (1965)).<br />
SF viewed edge on<br />
Fig. 7.9. Bright-field TEM micrograph <strong>of</strong> narrow planar <strong>defects</strong> viewed edge-on. B =<br />
[011], g =<br />
_<br />
11 1,<br />
s ≥ 0. Inserted is <strong>the</strong> SAD pattern taken over <strong>the</strong> area <strong>in</strong>dicated and<br />
below <strong>the</strong> dark field image obta<strong>in</strong>ed by us<strong>in</strong>g <strong>the</strong> spot <strong>in</strong>dicated.