Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...
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72<br />
Table 7.1. The values used <strong>in</strong> calculat<strong>in</strong>g <strong>the</strong> camera length. Rm is <strong>the</strong> measured<br />
values <strong>in</strong> arbitrary units us<strong>in</strong>g measur<strong>in</strong>g s<strong>of</strong>tware and R is <strong>the</strong> actual values <strong>in</strong><br />
meters obta<strong>in</strong>ed by us<strong>in</strong>g <strong>the</strong> scal<strong>in</strong>g factor. A value <strong>of</strong> 5.43Å was used for <strong>the</strong> lattice<br />
parameter <strong>of</strong> Si.<br />
Index Rm R (<strong>in</strong> m) λL (<strong>in</strong> m 2 )<br />
93.49 0.007805 2.45E-12<br />
93.49 0.007805 2.45E-12<br />
91.39 0.00763 2.39E-12<br />
91.39 0.00763 2.39E-12<br />
107.27 0.008956 2.43E-12<br />
107.27 0.008956 2.43E-12<br />
Average 2.42E-12<br />
Table 7.2. The values used <strong>in</strong> calculat<strong>in</strong>g <strong>the</strong> lattice parameter <strong>of</strong> <strong>SiC</strong>. Rm is <strong>the</strong><br />
measured values <strong>in</strong> arbitrary units us<strong>in</strong>g measur<strong>in</strong>g s<strong>of</strong>tware and R is <strong>the</strong> actual<br />
values <strong>in</strong> meters obta<strong>in</strong>ed by us<strong>in</strong>g <strong>the</strong> scal<strong>in</strong>g factor.<br />
Index Rm R (<strong>in</strong> m) dhkl (<strong>in</strong> m) Lattice parameter (<strong>in</strong> m)<br />
116.37 0.009715 2.49E-10 4.32E-10<br />
115.86 0.009673 2.51E-10 4.34E-10<br />
115.90 0.009676 2.50E-10 4.34E-10<br />
114.67 0.009573 2.53E-10 4.38E-10<br />
133.69 0.011161 2.17E-10 4.34E-10<br />
132.43 0.011056 2.19E-10 4.38E-10<br />
Average 4.35E-10 ± 0.02E-10<br />
Us<strong>in</strong>g this procedure, <strong>the</strong> lattice parameter <strong>of</strong> <strong>the</strong> <strong>SiC</strong> was determ<strong>in</strong>ed by tak<strong>in</strong>g an<br />
average <strong>of</strong> <strong>the</strong> parameters obta<strong>in</strong>ed us<strong>in</strong>g all <strong>the</strong> and diffraction spots<br />
present <strong>in</strong> <strong>the</strong> pattern. The lattice parameter was found to be 4.35Å ± 0.02Å.<br />
Fur<strong>the</strong>rmore from <strong>the</strong> orientation relationship between <strong>the</strong> two sets <strong>of</strong> diffractions<br />
spots it is clear that exact epitaxial orientation between <strong>the</strong> two materials were<br />
obta<strong>in</strong>ed dur<strong>in</strong>g growth with <strong>the</strong> follow<strong>in</strong>g orientation relationship {001}Si || {001}<strong>SiC</strong><br />
and Si || <strong>SiC</strong>.<br />
Fig. 7.1 also shows evidence <strong>of</strong> planar <strong>defects</strong> orig<strong>in</strong>at<strong>in</strong>g at <strong>the</strong> <strong>in</strong>terface and<br />
extend<strong>in</strong>g <strong>in</strong>to <strong>the</strong> bulk <strong>of</strong> <strong>the</strong> <strong>SiC</strong>. This was confirmed by a high resolution TEM<br />
study <strong>of</strong> <strong>the</strong> <strong>in</strong>terface shown <strong>in</strong> Fig. 7.3.