Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...

(a)
(b)
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Fig. 6.2. (a) Si and C vacancies produced per unit distance in 3C-SiC using
displacement energies of 35 eV and 20 eV respectively (Heinisch et al.); (b) Si and C
vacancies produced per unit distance in 3C-SiC using displacement energies of 93 eV
and 16.3 eV respectively (Vladimirov et al.)
SRIM gives the number of vacancies produced per ion for the two sets of
displacement energies to be 13.2 and 10.1 respectively. It is also evident from Fig.
6.2. that the number of Si vacancies is always less than that of the C due to its
displacement energy being higher. In the case of Fig. 6.2 (b) the anisotropy is very
high with an order of magnitude difference in the numbers produced. Fig. 6.3. shows
a plot of the number of displaced atoms per unit distance per incoming ion for the
displacement energies used by Heinsich et al. (2004).