Analysis of the extended defects in 3C-SiC.pdf - Nelson Mandela ...

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102 Nagasawa, H., Kawahara, T. and Yagi, K. : (2002) Mat. Sci. For., 389-393, 319. Nagasawa, H., Yagi, K. and Kawahara, T. : (2002) J. Cryst. Growth, 237-239, 1244. Neethling, H.N. : (1980) “Radiation Damage in Proton Bombarded Galluim Arsenide”, University of Port Elizabeth. Perlado, J.M., Malerba, J.M., Sanchez-Rubio, A. and Díaz de la Rubia, T. : (2000) J. Nucl. Mat., 276, 235. Pirouz, P., Chorey, C.M., Cheng, T.T. and Powell J.A. : (1987) Mat. Res. Soc. Symp. Proc., 91, 399. Pirouz, P. and Yang, J.W. : (1993) Ultramicroscopy, 51, 189. Powell, J.A., Chorey, C.M., Cheng, T.T. and Pirouz, P. : (1987) Proc. Microsc. Semicond. Mater. Conf., 87, 175. Powell, J.A., Chorey, C.M., Pirouz, P., and Mitchell, T.E. : (1987) “Semiconductor- Based Heterostructures: Interfacial Structure and Stability”, ed. By M.L. Green et al., TMS Publications, 115. Price, R.J. : (1973) J. Nucl. Mat., 48, 47. Rurali, R., Hernández, E., Godignon, P., Rebello, J. and Ordejón, P. : (2003) Comp. Mat. Sci., 27, 36. Ryazanov, A.I., Klaptsov, A.V., Kohyama, A., Katoh, Y., and Kishimoto, H. : (2004) J. Nucl. Mat., 329-333, 486. Ryazanov, A.I., Klaptsov, A.V., Kohyama, A., Katoh, Y., and Kishimoto, H. : (2002) J. Nucl. Mat., 307-311, 1107. Seitz, F. and Koehler, J. : (1956) Solid State Physics, 2, 305.
103 Smith, D.J., Jepps, N.W. and Page, T.F. : (1978) J. Micr., 114, 1. Stirland, D.J. and Straugh, B.W. : (1976) Thin Solid Films, 31, 139. Stoemenos, J., Syväjärvi, M., Yakimova, R. and Polychroniadis, E.: (2004) J. Cryst. Growth, 263, 68. Sudarshan, T.S. and Maximenko, S.I. : (2006) Microelec. Eng., 83, 155. Vladimirov, P.V., Lizunov, D., Ryazanov, A.I. and Möslang, A. : (1998) J. Nucl. Mat., 253, 104. Yano, T., Miyazaki, H., Akiyoshi, M. and Iseki, T. : (1998) J. Nucl. Mat., 253, 78. Yano, T. and Iseki, T. : (1990) Phil. Mag. A., 62, 421. Yun, J., Takahashi, T., Ishida, Y. and Okumura, H. : (2006) J. Cryst. Growth, 291, 140. Ziegler, J.F., Biersack, J.P. and Littmark,U. : (1985) “The Stopping and Range of Ions in Solids”, Volume 1, Pergamon Press, Inc.
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Analysis of the Extended Defects in
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My sincere thanks to the following
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OPSOMMING Hierdie dissertasie hande
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4.2.5. Two-Beam Scattering Matrix 4
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Dedicated to my wife and parents
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SUMMARY The dissertation focuses on
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CONTENTS Chapter 1: INTRODUCTION 1
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1 CHAPTER ONE INTRODUCTION Silicon
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2.1. Introduction 3 CHAPTER TWO OVE
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2.2.2 The Zinc-Blende Structure 5 T
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2.3 Point Defects, Defect Migration
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v m Em vm0 exp( ) (2.2) kT 9 wher
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11 explained and the concept of par
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13 Straight dislocations furthermor
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2.5 Partial Dislocations and Slip 1
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17 Fig. 2.13. The geometrical setup
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19 extrinsic stacking faults are th
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2.8 Twinning 21 Twinning is a proce
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23 Fig. 2.20. The process of vacanc
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S n Td (3.2) 25 and is also referr
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27 where a = a0(Z1 2/3 + Z2 2/3 ) -
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29 Using this expression, curves of
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31 As stated previously hard-sphere
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33 where A is the atomic weight. Th
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35 a vacancy dislocation loop if th
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37 Fig. 4.1. (a) A wave incident on
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39 Consider Fig. 4.2 which illustra
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41 V0 is the mean inner potential o
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43 beam left-hand side g' = 0 g' =
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45 In addition another set of indep
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47 When this is incorporated into t
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S ( s , z ) e T i Se ( / 0 )
Page 65 and 66: z0 z2 . xn cos and (4.47) D 1 proj
Page 67 and 68: 5.1 Introduction 53 CHAPTER FIVE LI
Page 69 and 70: 55 different orientations. The inte
Page 71 and 72: 57 Furthermore Pirouz et al. (1987)
Page 73 and 74: 59 intersection of the fault, the f
Page 75 and 76: 61 each nuclei because of the low s
Page 77 and 78: 63 (2000) found that subsequent ann
Page 79 and 80: 6.3.1 Ion Range and Defect Producti
Page 81 and 82: 67 Fig. 6.3. Total number of displa
Page 83 and 84: 7.1 Introduction 69 CHAPTER SEVEN R
Page 85 and 86: Fig. 7.2. Simulated diffraction pat
Page 87 and 88: 73 Fig. 7.3. A HRTEM image of the S
Page 89 and 90: 75 Fig. 7.5. The stacking fault sel
Page 91 and 92: (Si/ni) 2 0.000018 0.000016 0.00001
Page 93 and 94: 79 may be concluded that the initia
Page 95 and 96: 81 Fig. 7.11. Bright field TEM micr
Page 97 and 98: 83 Fig. 7.12 which was obtained by
Page 99 and 100: 85 Fig. 7.13. Bright-field TEM micr
Page 101 and 102: 87 (a) (b) Fig. 7.15. The (a) exper
Page 103 and 104: 89 In the following paragraphs the
Page 105 and 106: Fig. 7.18. CBED pattern taken of th
Page 107 and 108: 93 Table 7.5. The measured paramete
Page 109 and 110: 7.4.2 Results 95 Fig. 7.22. Bright-
Page 111 and 112: 97 Twin platelets on {111} planes
Page 113 and 114: 99 REFERENCES Blumenau, A.T., Jones
Page 115: 101 Hull, D., Bacon, D.J. : (1984)
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