Complete Report - University of New South Wales

4.6 SILICON PHOTONICS RESEARCH GROUP
University Staff
A/Prof. Jianhua Zhao (group leader: integrated LEDs)
A/Prof. Thorsten Trupke (group leader: silicon laser)
Prof. Martin Green
Prof. Stuart Wenham
Research Fellows
Dr. Aihua Wang
Adjunct Fellow
Dr. K. Catchpole
Research Staff
Dr. Robert Bardos
Dr. Tom Puzzer
Research Assistant
Guangchun Zhang
Research Student
Supriya Pillai
Technical Staff
Jules Yang
Collaborators
Susan Angus, Dr. Fay Hudson, A/Prof. Andrew Dzurak, Centre of Excellence for Quantum
Computing, UNSW
Prof. Peter Würfel, University of Karlsruhe
4.6.1 Thick SOI LED Devices
Research on Silicon On Insulator (SOI) Light Emitting Diodes (LEDs) continued in the Centre
during 2005. Originally most of these SOI LEDs were fabricated on thin silicon layers aiming
for a few nanometre silicon thickness to achieve quantum confi nement effects. The benefi t
of such quantum confi nement is the increased light emission and absorption effi ciencies, and
the ability to emit shorter wavelength light than the band-edge emission. However, no such
quantum confi nement has been demonstrated to date due to the diffi culties in precise control
of the processing conditions.
In 2005, emphasis was changed to the fabrication of SOI LEDs on thicker silicon layers of
about 1.3 µm thickness. This was expected to result in better electrical performance for
these LEDs, and also increased electroluminescence (EL) effi ciency. Figure 4.6.1 shows a
schematic diagram of the cross sectional view of the light emitting diode design.
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