Complete Report - University of New South Wales

The fourth “spin-off” Centre strand of silicon photonics draws upon elements of all three of
the photovoltaic strands. The aim is to develop silicon light-emitting-diodes (LEDs) that can be
integrated into silicon integrated circuits, with their output capable of modulation at gigahertz
frequencies (Fig. 4.1.5). This strand is closely related to the high-effi ciency cell work in our fi rstgeneration
strand of research, since the associated Centre researchers have demonstrated
the highest-performing LEDs based on bulk silicon by a very clear margin, internationally. The
work also draws upon the expertise in the second-generation strand since thin fi lms of silicon
are integral to the silicon-on-insulator (SOI) wafers used in this work. “Light-trapping” is also
very relevant to both strands. The common interest in quantum-confi nement in silicon also
provides strong links to the third-generation strand. Another objective being pursued in the
silicon photonic strand is the demonstration of the fi rst silicon laser. This is the “holy grail” of
the silicon photonics fi eld.
Figure 4.1.5:
One of the concepts for an
integrated silicon light-emitter/
modulator presently being
investigated experimentally.
Modulation is sought using the
quantum-confi ned Stark effect
in thin silicon-on-insulator (SOI)
layers.
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