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Complete Report - University of New South Wales

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Figure 4.1.3.3 shows the measured I-V curve <strong>of</strong> the best rear emitter n-PERT cell, Wnrj7-2a,<br />

which has demonstrated an effi ciency <strong>of</strong> 22.7%. This equals the best reported effi ciency<br />

from n-type silicon substrates [R. King, et al, 21st IEEE PVSC, p.227, 1990, P. Verlinden, 14th<br />

European PVSEC, pp.96, 1997].<br />

1.0<br />

amps<br />

0.8<br />

0.6<br />

0.4<br />

0.2<br />

0.0<br />

Cell ID: Wnrj7-2a<br />

Cell Area: 22.04 cm 2<br />

Temperature: 25.1°C<br />

Voc = 702 mV<br />

Isc = 0.884 A<br />

Jsc = 40.1 mA/cm 2<br />

FF = 0.805<br />

Eff = 22.7%<br />

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br />

volts<br />

Figure 4.3.1.3: I-V curve <strong>of</strong> a rear emitter<br />

n-type cell as measured at Sandia National<br />

Laboratories under 100 mW/cm 2 , AM1.5<br />

global spectrum at 25ºC.<br />

It is seen that the cells on thinner substrates demonstrate improved effi ciencies. Also, limited<br />

emitter areas were defi ned by lithography for the last batch, Wnrj7. The emitter boron<br />

diffusion area was terminated about 200 µm from the scribed cell edge. This has signifi cantly<br />

improved the cell fi ll factors to over 80% and hence improved the cell effi ciencies.<br />

4.3.1.4 Spectral Response Measurement and Analysis<br />

The spectral response <strong>of</strong> the best n-type re-PERT cell, Wnrj7-2a, was measured at Sandia<br />

National Laboratories, with results shown in Figure 4.3.1.4. This cell has internal quantum<br />

effi ciency (IQE) around 98%, compared to 100% for the standard front emitter PERL cells<br />

on p-type substrates. Hence, its current density is only about 1 mA/cm 2 lower compared<br />

to the best p-type PERL cells. The previous 400 µm thick cells had a much lower IQE <strong>of</strong> only<br />

around 93% and a short-circuit current density about 2 mA/cm 2 lower than the best PERL<br />

cells. It is clear that the 170 µm thin substrates and the modest resistivity <strong>of</strong> 1.5 Ω-cm have<br />

helped this cell to increase its IQE and Jsc. The IQE for the second batch cell, Wnrj4-3b,<br />

was very close to that from the 170 µm thin cell. Hence, the 270 µm cells and 170 µm thin<br />

cells had similar experimental short-circuit current densities. However, the long wavelength<br />

refl ection from the 170 µm thin cell had been signifi cantly increased compared to that from<br />

the thicker cells. This gives evidence that the 170 µm might be too thin already for the best<br />

light absorption.<br />

Reflectance, EQE, and IQE (%)<br />

100<br />

90<br />

80<br />

70<br />

60<br />

50<br />

40<br />

30<br />

20<br />

10<br />

0<br />

300 400 500 600 700 800 900 1000 1100 1200<br />

Wavelength (nm)<br />

Figure 4.3.1.4: Spectral response <strong>of</strong><br />

the best n-type re-PERT cell, Wnrj7-2a,<br />

on a 1.5 µ-cm resistivity, 170 µm thin<br />

n-type substrate.<br />

28

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