Electronic Devices and Amplifier Circuits

ExercisesR C5 KΩ12 VV CCCB I BI CV CV SR BV BEEV BI EV ER E3 KΩ9. For an NPN transistor circuit β = 100 , V CC = 11.3 V , V B = 3.5 V and with the reverse−biased collector−base junction set at V CB = 1.8 V we want the collector current to beI C = 0.8 mA . What should the values of R C and R E be to achieve this value?10. For a PNP transistor circuit with β = 120 , V EE = 12 V , V B = 0 V, V CC = – 12 V , andR E = 3 KΩ , what would the largest value of R C be so that the transistor operates at theactive mode?11. For a PNP transistor circuit with β = 150 , V EE = 12 V , V B = 0 V, V CC = – 12 V ,I E = 0.8 mA , and V CB = – 3 V, what should the values of R C and R E be so that the transistoroperates at the active mode?12. For the circuit below, it is known that β = 120 for both transistors. Find all indicated voltagesand currents. Are both the transistors operating in the active mode? What is the total powerabsorbed by this circuit?R V E2 5 KΩ 12 V CCR C1 8 KΩV E2R 1 60 KΩI EB2B2 B2 IE2 VC1E210 μA C2IV B2B1 C1I C2VV C2 R C1C2I B1 V BE1 E18 KΩV B1 I E1R 30 V R 2 E1 E1KΩ5 KΩElectronic Devices and Amplifier Circuits with MATLAB® / Simulink® / SimElectronics® Examples, Third EditionCopyright © Orchard Publications3−91