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Qualification of the Assembly Process of Flip-Chip BGA Packages ...

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Texas Tech University, Nivetha Shivan, May 2012<br />

This gives us an edge over Phase I, as we can also test <strong>the</strong> parts electrically to make sure<br />

<strong>the</strong> new package has no impact on <strong>the</strong> electrical behavior <strong>of</strong> <strong>the</strong> die inside.<br />

Phase II also introduces ano<strong>the</strong>r variable, a change in <strong>the</strong> wafer fabrication technology<br />

called Nitride Seal Mask (NSM).<br />

3.1.2.1 Nitride Seal Mask concept [6]<br />

When devices are stored in high humidity environments for an extended period <strong>of</strong> time,<br />

<strong>the</strong>re could be moisture absorption which could lead to die edge delamination. This<br />

defect “die edge delamination” means <strong>the</strong>re is a separation that has occurred in <strong>the</strong> edge<br />

<strong>of</strong> <strong>the</strong> die (doped oxide layer) due to <strong>the</strong> moisture absorption. The oxides swells,<br />

delaminates and this delamination propagates to internal active circuits and creates<br />

separation in <strong>the</strong> metal contacts, causing <strong>the</strong> device to be inoperable.<br />

In this NSM concept, an impermeable moisture barrier is formed around <strong>the</strong> perimeter <strong>of</strong><br />

<strong>the</strong> die by making use <strong>of</strong> <strong>the</strong> existing passivation layers. The existing passivation layers<br />

are a thin layer <strong>of</strong> undoped oxide, above which <strong>the</strong>re is a thicker layer <strong>of</strong> nitride. There is<br />

also an opening in <strong>the</strong> passivation layer, to allow wire bonds to be connected to <strong>the</strong> metal<br />

layer inside. Figure 3.7 explains <strong>the</strong> concept diagrammatically.<br />

Figure 3.7: NSM Concept [6]<br />

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