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Qualification of the Assembly Process of Flip-Chip BGA Packages ...

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Texas Tech University, Nivetha Shivan, May 2012<br />

CHAPTER 4<br />

TECHNIQUES USED IN QUALIFICATION<br />

This chapter deals with <strong>the</strong> techniques that are used in qualification <strong>of</strong> <strong>the</strong> FC package for<br />

<strong>the</strong> new product. Firstly, <strong>the</strong> technique which is used to measure <strong>the</strong> Warpage <strong>of</strong> <strong>the</strong><br />

package is discussed. This measurement is done in Phase I <strong>of</strong> <strong>the</strong> pre-engineering<br />

qualification. Secondly, <strong>the</strong> stress tests such as MSL3 pre-conditioning, Temperature<br />

cycling and Pressure cooker test are discussed. These tests are done in both Phase I and<br />

Phase II. Thirdly, <strong>the</strong> technique used for verifying <strong>the</strong> devices‟ electrical functionality is<br />

discussed. Lastly, <strong>the</strong> techniques used to locate <strong>the</strong> physical failures in a package, such as<br />

CSAM and cross section analysis are discussed.<br />

4.1 Warpage Measurement Technique (Phase I) [12]<br />

Warpage is <strong>the</strong> out-<strong>of</strong>-plane displacement <strong>of</strong> a semiconductor package. The stress present<br />

in <strong>the</strong> package interfaces due to reasons like different CTE <strong>of</strong> <strong>the</strong> materials causes <strong>the</strong><br />

package to bend from <strong>the</strong> original planar surface. This could lead to electrical failures in<br />

<strong>the</strong> package as <strong>the</strong> bonding between <strong>the</strong> die and <strong>the</strong> substrate could have been misplaced<br />

due to <strong>the</strong> displacements. This makes it important to measure <strong>the</strong> warpage <strong>of</strong> a<br />

semiconductor package.<br />

A technique called Shadow moiré is used to measure <strong>the</strong> warpage. The method mainly<br />

uses <strong>the</strong> following apparatus to perform <strong>the</strong> measurement:<br />

1. Quartz glass etched with equally spaced parallel lines<br />

2. White light source<br />

3. Camera<br />

The quartz glass is placed parallel to <strong>the</strong> IC package whose warpage needs to be<br />

measured. A beam <strong>of</strong> white light is directed onto <strong>the</strong> grated glass plate. The white light is<br />

used only for illumination. Shadows <strong>of</strong> <strong>the</strong> etched lines are formed on <strong>the</strong> top surface <strong>of</strong><br />

<strong>the</strong> package. The geometric interference between <strong>the</strong> actual etched lines and <strong>the</strong>ir<br />

shadows on <strong>the</strong> package surface forms moiré patterns which is viewed from a different<br />

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