Star-Hspice Quick Reference Guide

More documents

Recommendations

Info

MOSFET Introduction Name (Alias) Unit Default Description WMLT - 1 Width diffusion layer shrink reduction factor XJ m 0 Metallurgical junction depth XW (WDEL, DW) m 0 Accounts for masking and etching effects See “Using MOS Geometry Model Parameters” in the Star-Hspice Manual. Common Threshold Voltage Parameters Name (Alias) Unit Default Description DELVTO V 0.0 Zero-bias threshold voltage shift GAMMA V 1/2 0.527625 Body effect factor NGATE 1/cm 3 - Polysilicon gate doping, used for analytical model only NSS 1/cm 2 1.0 Surface state density NSUB 1/cm 3 1e15 Substrate doping (DNB, NB) PHI V 0.576036 Surface potential 9-8 Star-Hspice Quick Reference Guide
MOSFET Element Statement Name (Alias) Unit Default Description TPG (TPS) - 1.0 Type of gate material, used for analytical model only VTO (VT) V - Zero-bias threshold voltage See “Common Threshold Voltage Parameters” in the Star-Hspice Manual. Impact Ionization Model Parameters Name (Alias) Unit Default Description ALPHA 1/V 0.0 Impact ionization current coefficient LALPHA µm/V 0.0 ALPHA length sensitivity WALPHA µm/V 0.0 ALPHA width sensitivity VCR V 0.0 Critical voltage LVCR µm ⋅ V 0.0 VCR length sensitivity WVCR µm ⋅ V 0.0 VCR width sensitivity IIRAT - 0.0 Portion of impact ionization current that goes to source. See “Using Impact Ionization Model Parameters” in the Star-Hspice Manual. Star-Hspice Quick Reference Guide 9-9
Page 1 and 2:
Star-Hspice Quick Reference Guide R
Page 3 and 4:
AGREEMENT WITH AVANT! CORPORATION O
Page 5 and 6:
1- Chapter 1 Introduction This Quic
Page 7 and 8:
Input and Output Files Input and Ou
Page 9 and 10:
.PARAMETER .END Input and Output Fi
Page 11 and 12:
Input and Output Files tnom vt(t) v
Page 13 and 14:
2- Chapter 2 Discrete Device Librar
Page 15 and 16:
3- Chapter 3 Passive Devices and In
Page 17 and 18:
n1 n2 R Rxxx SCALE TC1 TC2 user-def
Page 19 and 20:
Capacitors M W L DTEMP C=‘equatio
Page 21 and 22:
IC L=inductance L=‘equation’ LT
Page 23 and 24:
Independent Source Element Lzzz Nam
Page 25 and 26:
Pulse Source Function General Form
Page 27 and 28:
Single-Frequency FM Source Function
Page 29 and 30:
Independent Sources TIME tr v1 v2
Page 31 and 32:
4- Chapter 4 Transmission Lines Sta
Page 33 and 34:
5- Chapter 5 IBIS Conventions The t
Page 35 and 36:
Buffers + [interpol={1|2}] + [ramp_
Page 37 and 38:
Buffers I/O Open Drain, I/O Open Si
Page 39 and 40:
Differential Pins + [buffer={13|io_
Page 41 and 42:
6- Chapter 6 Diodes The topics cove
Page 43 and 44:
Junction Model Statement WP Width o
Page 45 and 46:
Junction Model Parameters Name (Ali
Page 47 and 48:
Junction Cap Model nodeplus nminus
Page 49 and 50:
Junction Cap Model Name (Alias) Uni
Page 51 and 52:
Junction Cap Model Name (Alias) Uni
Page 53 and 54:
Temperature Effects Temperature Eff
Page 55 and 56:
Fowler-Nordheim Diode Name (Alias)
Page 57 and 58:
Fowler-Nordheim Diode Name (Alias)
Page 59 and 60:
7- Chapter 7 BJT Element The topics
Page 61 and 62:
BJT Model Parameters mname NPN pnam
Page 63 and 64:
BJT Model Parameters Low-Current Be
Page 65 and 66:
See “Using Parasitic Resistance P
Page 67 and 68:
BJT Model Parameters Transit Time P
Page 69 and 70: LEVEL 6 Philips Bipolar Model LEVEL
Page 71 and 72: LEVEL 6 Philips Bipolar Model Param
Page 77 and 78: LEVEL 6 Philips Bipolar Model Flags
Page 79 and 80: Avalanche Model Parameters - Level
Page 81 and 82: Base-Emitter Capacitances - Level 5
Page 83 and 84: Transit Time Parameters - Level 504
Page 85 and 86: LEVEL 6 Philips Bipolar Model Noise
Page 87 and 88: LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
Page 89 and 90: LEVEL 8 HiCUM Model BE Depletion Ca
Page 91 and 92: LEVEL 8 HiCUM Model Critical Curren
Page 93 and 94: LEVEL 8 HiCUM Model Parameter Unit
Page 95 and 96: LEVEL 8 HiCUM Model BE Tunneling Pa
Page 97 and 98: LEVEL 8 HiCUM Model Substrate Trans
Page 103 and 104: 8- Chapter 8 Elements This chapter
Page 105 and 106: JFET and MESFET Model Statements JF
Page 107 and 108: JFET Model Parameters Name (Alias)
Page 113 and 114: 9- Chapter 9 MOSFET Introduction Th
Page 115 and 116: MOSFET Element Statement RDC RSC W
Page 117 and 118: MOSFET Element Statement Capacitanc
Page 119: MOSFET Element Statement Name (Alia
Page 123 and 124: MOSFET Element Statement Name (Alia
Page 125 and 126: Charge Conservation Parameters (CAP
Page 127 and 128: MOSFET Element Statement Name (Alia
Page 129 and 130: 10- Chapter 10 MOSFET Models This c
Page 131 and 132: Model Table LEVEL MOSFET Model Desc
Page 133 and 134: Model Table LEVEL MOSFET Model Desc
Page 135 and 136: LEVEL 47 BSIM3 Version 2 MOS Model
Page 137 and 138: LEVELs 49 and 53 BSIM3v3 MOS Models
Page 139 and 140: LEVEL 54 BSIM 4.0 Model • Since d
Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
Page 143 and 144: LEVEL 57 UC Berkeley BSIM3-SOI Mode
Page 151 and 152: LEVEL 58 University of Florida SOI
Page 153 and 154: LEVEL 59 UC Berkeley BSIM3-SOI FD M
Page 155 and 156: LEVEL 60 UC Berkeley BSIM3-SOI DD M
Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
Page 159 and 160: 11- Chapter 11 Behavior Macromodeli
Page 161 and 162: G Elements Voltage Controlled Curre
Page 163 and 164: Voltage and Current Controlled Elem
Page 171 and 172:
F Element Parameters Voltage and Cu
Page 173 and 174:
Voltage and Current Controlled Elem
Page 175 and 176:
Voltage and Current Controlled Elem
Page 177 and 178:
12- Chapter 12 Controlling Input Th
Page 179 and 180:
General Control Options Option NOEL
Page 181 and 182:
General Control Options Interface O
Page 183 and 184:
General Control Options Error Optio
Page 185 and 186:
Model Analysis Options Option DEFNR
Page 187 and 188:
Model Analysis Options Option RELMO
Page 189 and 190:
Model Analysis Options Option DCSTE
Page 191 and 192:
Model Analysis Options Option PZTOL
Page 193 and 194:
Model Analysis Options Option RELTO
Page 195 and 196:
Model Analysis Options Option RELVA
Page 197 and 198:
Statements Statements Star-Hspice s
Page 199 and 200:
Statements pnami colnum fileout pva
Page 201 and 202:
Statements elname Element name that
Page 203 and 204:
.LIB Library File Definition Statem
Page 205 and 206:
Statements VERSION Star-Hspice vers
Page 207 and 208:
.TITLE Statement See “Title of Si
Page 209 and 210:
13- Chapter 13 Analyzing Data You c
Page 211 and 212:
DC Analysis incr1 … MODEL MONTE=v
Page 213 and 214:
AC Analysis See “.TF Statement
Page 215 and 216:
stop SWEEP TEMP type var .DISTO Sta
Page 217 and 218:
Small-Signal Network Analysis .NET
Page 219 and 220:
Double-Point Analysis General Form
Page 221 and 222:
tstop1… type UIC var FFT Analysis
Page 223 and 224:
Worst Case Analysis Numerical Integ
Page 225 and 226:
Worst Case Analysis AC Sweep Genera
Page 227 and 228:
14- Chapter 14 Optimizing Data This
Page 229 and 230:
.MODEL Statement Syntax General For
Page 231 and 232:
Laplace Transforms Voltage Gain H(s
Page 233 and 234:
15- Chapter 15 Output Format The to
Page 235 and 236:
Graphing Results in AvanWaves Setup
Page 237 and 238:
Print Commands Graph Commands A, D
Page 239 and 240:
See “.GRAPH Statement” in the S
Page 241 and 242:
Print Commands Target General Form
Page 243 and 244:
Print Commands out_var result TO WE
Page 245 and 246:
Print Commands YMAX If the absolute
Page 247 and 248:
DC and Transient Output out_var(1,2
Page 249 and 250:
AC Analysis Output AC Analysis Outp
Page 251 and 252:
Element Template Output ZIN ZOUT In
Page 253 and 254:
Element Template Listings Name Alia
Page 255 and 256:
Element Template Listings Independe
Page 257 and 258:
Page 259 and 260:
Page 261 and 262:
Page 263 and 264:
Page 265 and 266:
show all

Star-Hspice Quick Reference Guide

Create successful ePaper yourself

Delete template?

Save as template?