Star-Hspice Quick Reference Guide

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BJT Element LEVEL 6 Philips Bipolar Model (MEXTRAM LEVEL 504) The following tables describe MEXTRAM Level 504 as LEVEL 6 model parameters including parameter name, unit, default value, description and notes. For more detailed information, see ““LEVEL 6 Philips Bipolar Model (MEXTRAM LEVEL 504)”” in the Star-Hspice Manual. Parameters noted with a ‘*’ are not used in the DC model. Flags - Level 504 Parameters Unit Default Description LEVEL - 6 Model level VERS - 504 Flag for choosing MEXTRAM model (level 503 or 504) EXMOD - 1 Flag for extended modeling of the reverse current gain EXPHI - 1 *Flag for distributed high frequency effects in transient EXAVL - 0 Flag for extended modeling of avalanche currents 7-18 Star-Hspice Quick Reference Guide
LEVEL 6 Philips Bipolar Model Flags - Level 504 Parameters Unit Default Description TREF ^C 25.0 Reference temperature Basic Parameters - Level 504 Parameters Unit Default Description IS A 2.2e-17 Collector-emitter saturation current VER 2.5 Reverse early voltage VEF 44.0 Forward early voltage BF - 215.0 Ideal forward current gain XIBI - 0.0 Fraction of ideal base current that belongs to the sidewall IBF A 2.7e-15 Saturation current of the non-ideal forward base current MLF V 2.0 Non-ideality factor of the non-ideal forward base current Star-Hspice Quick Reference Guide 7-19
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Page 27 and 28: Single-Frequency FM Source Function
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Page 69 and 70: LEVEL 6 Philips Bipolar Model LEVEL
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Page 79 and 80: Avalanche Model Parameters - Level
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Page 87 and 88: LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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MOSFET Element Statement Name (Alia
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Model Table LEVEL MOSFET Model Desc
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Model Table LEVEL MOSFET Model Desc
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LEVEL 47 BSIM3 Version 2 MOS Model
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LEVELs 49 and 53 BSIM3v3 MOS Models
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LEVEL 54 BSIM 4.0 Model • Since d
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LEVEL 55 EPFL-EKV MOSFET Model LEVE
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LEVEL 57 UC Berkeley BSIM3-SOI Mode
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LEVEL 58 University of Florida SOI
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LEVEL 60 UC Berkeley BSIM3-SOI DD M
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LEVEL 62 RPI Poli-Si TFT Model •
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11- Chapter 11 Behavior Macromodeli
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G Elements Voltage Controlled Curre
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Voltage and Current Controlled Elem
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F Element Parameters Voltage and Cu
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General Control Options Option NOEL
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General Control Options Interface O
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General Control Options Error Optio
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Model Analysis Options Option DEFNR
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Model Analysis Options Option RELMO
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Model Analysis Options Option PZTOL
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Model Analysis Options Option RELTO
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Model Analysis Options Option RELVA
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Statements Statements Star-Hspice s
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.LIB Library File Definition Statem
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.TITLE Statement See “Title of Si
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DC Analysis incr1 … MODEL MONTE=v
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AC Analysis See “.TF Statement
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stop SWEEP TEMP type var .DISTO Sta
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Small-Signal Network Analysis .NET
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Double-Point Analysis General Form
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tstop1… type UIC var FFT Analysis
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Worst Case Analysis Numerical Integ
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Worst Case Analysis AC Sweep Genera
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14- Chapter 14 Optimizing Data This
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.MODEL Statement Syntax General For
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Laplace Transforms Voltage Gain H(s
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15- Chapter 15 Output Format The to
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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