Star-Hspice Quick Reference Guide

MOSFET Models
• For gate-body tunneling, set IGMOD=1.
• BSIMPD2.01 supports capmod=2 and 3 only; capmod=0
and 1 are not supported.
• By default, if Xj (source/drain junction depth) is not given,
it is set to Tsi (silicon film thickness). Xj is not allowed to be
greater than Tsi.
• BSIMPD refers substrate to the silicon below buried oxide,
not the well region in BSIM3. It is used to calculate backgate
flatband voltage (Vfbb) and parameters related to source/
drain diffusion bottom capacitance (Vsdth, Vsdfb, Csdmin).
Positive NSUB means the same type of doping as the body
and negative NSUB means opposite type of doping.
For more information about this model, see “Using BSIM3-
SOI PD in Star-HSPICE” in the Star-Hspice Manual.
LEVEL 57 Template Output
Name Alias Description
L LV1 Channel length (L)
W LV2 Channel width (W)
AD LV3 Area of the drain diode (AD)
AS LV4 Area of the source diode (AS)
ICVDS LV5 Initial condition for drain-source
voltage (VDS)
ICVGS LV6 Initial condition for gate-source
voltage (VGS)
10-18 Star-Hspice Quick Reference Guide