Star-Hspice Quick Reference Guide

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Controlling Input Model Analysis Options See “Model Analysis Options” in the Star-Hspice Manual. General Options Option Description DCAP SCALE TNOM The DCAP option selects the equations used in calculating the depletion capacitance for LEVEL 1 and 3 diodes and BJTs. Element scaling factor. The reference temperature for the simulation. See “General Options” in the Star-Hspice Manual. MOSFET Control Options Option CVTOL DEFAD DEFAS DEFL Description Changes the number of numerical integration steps in the calculation of the gate capacitor charge for a MOSFET using CAPOP = 3. Default value for MOSFET drain diode area. Default value for MOSFET source diode area. Default value for MOSFET channel length. 12-8 Star-Hspice Quick Reference Guide
Model Analysis Options Option DEFNRD DEFNRS DEFPD DEFPS DEFW SCALM WL Description Default value for the number of squares for the drain resistor on a MOSFET. Default value for the number of squares for the source resistor on a MOSFET. Default value for MOSFET drain diode perimeter. Default value for MOSFET source diode perimeter. Default value for MOSFET channel width. Model scaling factor. This option changes the order of specifying MOS element VSIZE from the default order length-width to width-length. See “MOSFET Control Options” in the Star-Hspice Manual. DC Solution Control Options Option Description ABSH = x ABSI = x Sets the absolute current change through voltage defined branches (voltage sources and inductors). Sets the absolute branch current error tolerance in diodes, BJTs, and JFETs during DC and transient analysis. Star-Hspice Quick Reference Guide 12-9
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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9- Chapter 9 MOSFET Introduction Th
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MOSFET Element Statement RDC RSC W
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MOSFET Element Statement Capacitanc
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MOSFET Element Statement Name (Alia
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Charge Conservation Parameters (CAP
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10- Chapter 10 MOSFET Models This c
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Model Table LEVEL MOSFET Model Desc
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Page 135 and 136: LEVEL 47 BSIM3 Version 2 MOS Model
Page 137 and 138: LEVELs 49 and 53 BSIM3v3 MOS Models
Page 139 and 140: LEVEL 54 BSIM 4.0 Model • Since d
Page 141 and 142: LEVEL 55 EPFL-EKV MOSFET Model LEVE
Page 143 and 144: LEVEL 57 UC Berkeley BSIM3-SOI Mode
Page 151 and 152: LEVEL 58 University of Florida SOI
Page 153 and 154: LEVEL 59 UC Berkeley BSIM3-SOI FD M
Page 155 and 156: LEVEL 60 UC Berkeley BSIM3-SOI DD M
Page 157 and 158: LEVEL 62 RPI Poli-Si TFT Model •
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Page 161 and 162: G Elements Voltage Controlled Curre
Page 163 and 164: Voltage and Current Controlled Elem
Page 171 and 172: F Element Parameters Voltage and Cu
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Page 179 and 180: General Control Options Option NOEL
Page 181 and 182: General Control Options Interface O
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Page 187 and 188: Model Analysis Options Option RELMO
Page 189 and 190: Model Analysis Options Option DCSTE
Page 191 and 192: Model Analysis Options Option PZTOL
Page 193 and 194: Model Analysis Options Option RELTO
Page 195 and 196: Model Analysis Options Option RELVA
Page 197 and 198: Statements Statements Star-Hspice s
Page 199 and 200: Statements pnami colnum fileout pva
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Page 203 and 204: .LIB Library File Definition Statem
Page 205 and 206: Statements VERSION Star-Hspice vers
Page 207 and 208: .TITLE Statement See “Title of Si
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Page 211 and 212: DC Analysis incr1 … MODEL MONTE=v
Page 213 and 214: AC Analysis See “.TF Statement
Page 215 and 216: stop SWEEP TEMP type var .DISTO Sta
Page 217 and 218: Small-Signal Network Analysis .NET
Page 219 and 220: Double-Point Analysis General Form
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Page 225 and 226: Worst Case Analysis AC Sweep Genera
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Page 229 and 230: .MODEL Statement Syntax General For
Page 231 and 232: Laplace Transforms Voltage Gain H(s
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Graphing Results in AvanWaves Setup
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Print Commands Graph Commands A, D
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See “.GRAPH Statement” in the S
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Print Commands Target General Form
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Print Commands out_var result TO WE
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Print Commands YMAX If the absolute
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DC and Transient Output out_var(1,2
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AC Analysis Output AC Analysis Outp
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Element Template Output ZIN ZOUT In
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Element Template Listings Name Alia
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Element Template Listings Independe
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