Star-Hspice Quick Reference Guide

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Output Format Name Alias Description PS LV12 Source diode periphery (PS) RDS LV13 Drain resistance (squares) (RDS) RSS LV14 Source resistance (squares) (RSS) XQC LV15 Charge sharing coefficient (XQC) GDEFF LV16 Effective drain conductance (1/ RDeff) GSEFF LV17 Effective source conductance (1/RSeff) IDBS LV18 Drain-bulk saturation current at -1 volt bias ISBS LV19 Source-bulk saturation current at -1 volt bias VDBEFF LV20 Effective drain bulk voltage BETAEFF LV21 BETA effective GAMMAEFF LV22 GAMMA effective DELTAL LV23 ∆L (MOS6 amount of channel length modulation) (only valid for LEVELs 1, 2, 3 and 6) UBEFF LV24 UB effective (only valid for LEVELs 1, 2, 3 and 6) 15-30 Star-Hspice Quick Reference Guide
Element Template Listings Name Alias Description VG LV25 VG drive (only valid for LEVELs 1, 2, 3 and 6) VFBEFF LV26 VFB effective – LV31 Drain current tolerance (not used in Star-Hspice releases after 95.3) IDSTOL LV32 Source diode current tolerance IDDTOL LV33 Drain diode current tolerance COVLGS LV36 Gate-source overlap capacitance COVLGD LV37 Gate-drain overlap capacitance COVLGB LV38 Gate-bulk overlap capacitance VBS LX1 Bulk-source voltage (VBS) VGS LX2 Gate-source voltage (VGS) VDS LX3 Drain-source voltage (VDS) CDO LX4 DC drain current (CDO) CBSO LX5 DC source-bulk diode current (CBSO) CBDO LX6 DC drain-bulk diode current (CBDO) GMO LX7 DC gate transconductance (GMO) Star-Hspice Quick Reference Guide 15-31
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Star-Hspice Quick Reference Guide R
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AGREEMENT WITH AVANT! CORPORATION O
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1- Chapter 1 Introduction This Quic
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Input and Output Files Input and Ou
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.PARAMETER .END Input and Output Fi
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Input and Output Files tnom vt(t) v
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2- Chapter 2 Discrete Device Librar
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3- Chapter 3 Passive Devices and In
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n1 n2 R Rxxx SCALE TC1 TC2 user-def
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Capacitors M W L DTEMP C=‘equatio
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IC L=inductance L=‘equation’ LT
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Independent Source Element Lzzz Nam
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Pulse Source Function General Form
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Single-Frequency FM Source Function
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Independent Sources TIME tr v1 v2
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4- Chapter 4 Transmission Lines Sta
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5- Chapter 5 IBIS Conventions The t
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Buffers + [interpol={1|2}] + [ramp_
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Buffers I/O Open Drain, I/O Open Si
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Differential Pins + [buffer={13|io_
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6- Chapter 6 Diodes The topics cove
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Junction Model Statement WP Width o
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Junction Model Parameters Name (Ali
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Junction Cap Model nodeplus nminus
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Junction Cap Model Name (Alias) Uni
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Junction Cap Model Name (Alias) Uni
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Temperature Effects Temperature Eff
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Fowler-Nordheim Diode Name (Alias)
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Fowler-Nordheim Diode Name (Alias)
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7- Chapter 7 BJT Element The topics
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BJT Model Parameters mname NPN pnam
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BJT Model Parameters Low-Current Be
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See “Using Parasitic Resistance P
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BJT Model Parameters Transit Time P
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LEVEL 6 Philips Bipolar Model LEVEL
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LEVEL 6 Philips Bipolar Model Param
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LEVEL 6 Philips Bipolar Model Flags
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Avalanche Model Parameters - Level
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Base-Emitter Capacitances - Level 5
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Transit Time Parameters - Level 504
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LEVEL 6 Philips Bipolar Model Noise
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LEVEL 8 HiCUM Model LEVEL - 8 HiCUM
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LEVEL 8 HiCUM Model BE Depletion Ca
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LEVEL 8 HiCUM Model Critical Curren
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LEVEL 8 HiCUM Model Parameter Unit
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LEVEL 8 HiCUM Model BE Tunneling Pa
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LEVEL 8 HiCUM Model Substrate Trans
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8- Chapter 8 Elements This chapter
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JFET and MESFET Model Statements JF
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JFET Model Parameters Name (Alias)
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9- Chapter 9 MOSFET Introduction Th
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MOSFET Element Statement RDC RSC W
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MOSFET Element Statement Capacitanc
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MOSFET Element Statement Name (Alia
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Charge Conservation Parameters (CAP
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10- Chapter 10 MOSFET Models This c
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Model Table LEVEL MOSFET Model Desc
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Model Table LEVEL MOSFET Model Desc
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LEVEL 47 BSIM3 Version 2 MOS Model
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LEVELs 49 and 53 BSIM3v3 MOS Models
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LEVEL 54 BSIM 4.0 Model • Since d
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LEVEL 55 EPFL-EKV MOSFET Model LEVE
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LEVEL 57 UC Berkeley BSIM3-SOI Mode
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LEVEL 58 University of Florida SOI
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LEVEL 59 UC Berkeley BSIM3-SOI FD M
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LEVEL 60 UC Berkeley BSIM3-SOI DD M
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LEVEL 62 RPI Poli-Si TFT Model •
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11- Chapter 11 Behavior Macromodeli
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G Elements Voltage Controlled Curre
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Voltage and Current Controlled Elem
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F Element Parameters Voltage and Cu
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12- Chapter 12 Controlling Input Th
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General Control Options Option NOEL
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General Control Options Interface O
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General Control Options Error Optio
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Model Analysis Options Option DEFNR
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Model Analysis Options Option RELMO
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Model Analysis Options Option DCSTE
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Model Analysis Options Option PZTOL
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Model Analysis Options Option RELTO
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Model Analysis Options Option RELVA
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Statements Statements Star-Hspice s
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Statements pnami colnum fileout pva
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Statements elname Element name that
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.LIB Library File Definition Statem
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Statements VERSION Star-Hspice vers
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.TITLE Statement See “Title of Si
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13- Chapter 13 Analyzing Data You c
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Page 213 and 214: AC Analysis See “.TF Statement
Page 215 and 216: stop SWEEP TEMP type var .DISTO Sta
Page 217 and 218: Small-Signal Network Analysis .NET
Page 219 and 220: Double-Point Analysis General Form
Page 221 and 222: tstop1… type UIC var FFT Analysis
Page 223 and 224: Worst Case Analysis Numerical Integ
Page 225 and 226: Worst Case Analysis AC Sweep Genera
Page 227 and 228: 14- Chapter 14 Optimizing Data This
Page 229 and 230: .MODEL Statement Syntax General For
Page 231 and 232: Laplace Transforms Voltage Gain H(s
Page 233 and 234: 15- Chapter 15 Output Format The to
Page 235 and 236: Graphing Results in AvanWaves Setup
Page 237 and 238: Print Commands Graph Commands A, D
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Page 241 and 242: Print Commands Target General Form
Page 243 and 244: Print Commands out_var result TO WE
Page 245 and 246: Print Commands YMAX If the absolute
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Page 249 and 250: AC Analysis Output AC Analysis Outp
Page 251 and 252: Element Template Output ZIN ZOUT In
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